Sensitive device structure, preparation method thereof and semiconductor device
A technology for sensitive devices and sensitive layers, which is applied in the manufacture of semiconductor devices, electrical components, and final products. It can solve problems such as polymer residues, forming holes or steps, and affecting product reliability. It achieves fast reaction etching rates, The effect of reducing polymer residues and improving the electrical properties and reliability of product terminals
Pending Publication Date: 2022-05-27
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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Problems solved by technology
[0003] However, in the process of forming the sensitive layer of the device in the existing etching process, polymer residues are often formed
Polymer residues will lead to the formation of cavities or steps during the subsequent film deposition, which will affect the electrical properties of the product terminal, and seriously affect the reliability of the product
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[0032] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. Embodiments of the present application are presented in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
[0033] The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application.
[0034] It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on the other elements or layers Layers may be on, adjacent to, connected or coupled to other elements or layers, or intervening elements or layers may be p...
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The invention relates to a sensitive device structure, a preparation method thereof and a semiconductor device. The preparation method of the sensitive device structure comprises the following steps: forming a sensitive material layer on a substrate, and forming a patterned mask layer on the sensitive material layer; under first etching gas, main etching is carried out on the sensitive material layer based on the patterned mask layer to form a device sensitive layer, the first etching gas comprises first fluoride gas and side wall protection gas, and the volume ratio of the side wall protection gas in the first etching gas does not exceed 5% of the volume ratio of the first fluoride gas; removing the patterned mask layer; and forming a passivation protection layer on the device sensitive layer. The polymer residues in the sensitive device structure can be effectively reduced, and the performance of the sensitive device is further improved.
Description
technical field [0001] The present application relates to the technical field of integrated circuits, and in particular, to a structure of a sensitive device, a preparation method thereof, and a semiconductor device. Background technique [0002] In some semiconductor devices, a sensitive device structure including a device sensitive layer is provided, so that various signals are detected through the device sensitive layer. The device sensitive layer has an important influence on the performance of the sensitive device structure, and it can be formed by an etching process. [0003] However, in the process of forming the device sensitive layer in the existing etching process, polymer residues are often formed. The polymer residue will lead to the formation of holes or steps during subsequent film deposition, which will affect the electrical properties of the product terminal and seriously affect the product reliability. SUMMARY OF THE INVENTION [0004] Based on this, emb...
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IPC IPC(8): H01J37/32H01L31/08H01L31/18
CPCH01J37/32449H01L31/18H01L31/08H01J2237/334Y02P70/50
Inventor 张彰谢红梅陈毓潇徐军赵佳王俊力宋健
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP