Vapor deposition equipment and wafer heating carrier and heating method thereof

Abstract

The invention discloses vapor deposition equipment as well as a wafer heating platform deck and a heating method thereof. The vapor deposition equipment comprises a platform deck body, an ejector pin body and a heating device, the heating device is arranged in the ejector pin body; a through hole is formed in the carrying table body, and the ejector pin body penetrates through the through hole; the ejector pin body is used for bearing a wafer and placing the wafer on the upper surface of the carrying table body, the heating device heats the ejector pin body, and the ejector pin body and the carrying table body jointly transfer heat to the wafer. The heating device is additionally arranged in the ejector pin body, so that the ejector pin body is heated by the heating device, the ejector pin body and the carrying table body jointly transfer heat to the wafer, the ejector pin body can reduce heat lost in the through hole or make up the heat lost in the through hole, and then the non-uniform heating degree of the wafer on the carrying table body is reduced; or the phenomenon that the wafer is heated unevenly on the carrying table body is avoided, the forming speed of a film on the upper surface of the wafer can be increased, the thickness of the film is increased, and the film forming efficiency of the surface of the wafer is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular to a vapor deposition equipment, a wafer heating stage and a heating method thereof. Background technique [0002] Chemical vapor deposition (CVD) is a chemical technology, which mainly uses one or several gas-phase compounds or elements containing thin film elements to perform chemical reactions on the surface of the substrate to form thin films. Chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single crystal, polycrystalline or glassy inorganic thin film materials. These materials can be oxides, sulfides, nitrides, carbides, or binary or multi-element interelement compounds in III-V, II-IV, IV-VI groups, and their physical functions can be passed through the gas phase. The doping deposition process is precisely controlled. [0003] The main process of chemical vapor deposition is completed in t...

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Problems solved by technology

[0004] The embodiment of the present application solves the technical problem of uneven heating of the wafer on the heating platform in the prior art by providing a vapor deposition equipment and its wafer heating platform and heating method, and realizes the improvement of film deposition on the wafer surface Thickness and the technical effect of improving the efficiency of thin film deposition on the wafer surface

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