Test method, device, system and equipment of MOS device and storage medium
A technology of MOS device and test method, which is applied in the direction of measuring device, instrument, measuring electricity, etc., can solve the problem of low test accuracy, and achieve the effect of high accuracy
Active Publication Date: 2022-07-01
JIANGSU HAIDONG SEMICON TECH CO LTD
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Problems solved by technology
[0004] The present application provides a test method, device, system, equipment and storage medium of a MOS device, which can solve the problem of poor test accuracy caused by detecting whether the drain current of the device reaches the reference current to determine whether it fails in the related art. low problem
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[0051] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
[0052] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...
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The invention discloses an MOS device test method, device, system and equipment and a storage medium, and the method comprises the steps: obtaining the drain current of a test device, and enabling the drain current to be measured when a grid voltage is applied to the test device; calculating a measured value of a threshold voltage of the test device according to the gate voltage and the drain current; the environment temperature of the environment where the wafer is located is obtained; a prediction model is called to process the grid voltage, the drain current corresponding to the grid voltage and the environment temperature, a prediction value of the threshold voltage of the test device is obtained, the prediction model is a machine learning model obtained according to training of a test group, and the test group is data obtained by testing a sample device; the test group comprises measurement data and a threshold voltage corresponding to the sample device, and the measurement data comprises a gate voltage applied to the sample device, a drain current corresponding to the gate voltage of the sample device and an environment temperature of an environment where the sample device is located; and determining whether the test device fails according to the measured value and the predicted value.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a testing method, apparatus, system, device and storage medium of a MOS device. Background technique [0002] In the backend of line (BEOL) process of a semiconductor manufacturing process, it is usually necessary to perform functional tests on semiconductor devices integrated on wafers, and the wafers that pass the tests can be put into subsequent use as valid products. With the increasing size of wafers, the number of chips on a single wafer is also increasing. It is impossible to test the device functions of all chips one by one. Only a few points on the wafer are randomly selected to test their device functions. [0003] A metal-oxide-semiconductor field-effect transistor (MOSFET, referred to as "MOS" in this application) device is a semiconductor device used in analog circuits and digital circuits. In the related art, a method for testing ...
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Login to View More IPC IPC(8): G01R31/27
CPCG01R31/275G01R31/2601G01R31/2621
Inventor 黄传伟胡盖吴雷
Owner JIANGSU HAIDONG SEMICON TECH CO LTD