Photomask and method for inspecting photomask

Abstract

The embodiment of the invention relates to a photomask and a method for inspecting the photomask. Embodiments of the invention provide a photomask comprising: a plurality of pattern regions, each of the pattern regions being defined by a respective boundary, a first pattern region comprising a first mask feature; and a training region adjacent a boundary of the pattern region, the training region including a first training feature, where the first training feature is comparable to the first mask feature.

Description

technical field [0001] Embodiments of the present invention relate to photomasks and methods of inspecting photomasks. Background technique [0002] An integrated circuit (IC) is formed by first generating an integrated circuit design on a computer that describes the physical layout of the integrated circuit. Next, a photomask is formed from the IC design. Photomasks are used during IC fabrication to pattern semiconductor substrates to form on-chip structures corresponding to the IC design. In the production of semiconductors, lithography is performed using ultraviolet light sources or other radiation beams such as ion beams, X-rays, extreme ultraviolet (EUV) and deep ultraviolet (DUV). Photomasks are typically inspected for mask defects before being used to replicate mask images on semiconductor substrates used in products. If mask defects are detected, such defects can be repaired so that the mask defects do not replicate on the semiconductor substrate. [0003] Howeve...

AI Technical Summary

Problems solved by technology

The problem of misidentifying mask defects is exacerbated by the requirement of complex design rules

Reviewing inspection results and manually filtering defects to be fixed and misidentifying defects will cause heavy manpower burden and degrade overall productivity

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