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IGBT module state monitoring method and device

A state monitoring device and state technology, applied in the direction of single semiconductor device testing, etc., can solve the problem of low monitoring accuracy of IGBT modules, achieve the effect of accurate working state and increased responsiveness

Active Publication Date: 2022-07-12
JIANGSU HAIDONG SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The application provides a method and device for monitoring the state of an IGBT module, which can solve the problem of low monitoring accuracy of the IGBT module proposed in the prior art

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  • IGBT module state monitoring method and device
  • IGBT module state monitoring method and device

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Embodiment Construction

[0030] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0031] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...

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Abstract

The invention discloses an IGBT module state monitoring method and device, and the method is characterized in that the method comprises the following steps: S1, obtaining the voltage Vge between a grid electrode and an emitter electrode of an IGBT module and the voltage Vce between a collector electrode and the emitter electrode at different junction temperatures and different elapsed time; s2, acquiring the collector current of the IGBT module; s3, through the voltage Vge, the voltage Vce, the collector current and the elapsed time, obtaining characteristic curves of the IGBT module under different elapsed time; s4, aging characteristic quantities of different elapsed time are obtained on the characteristic curves of different elapsed time of the IGBT module; and S5, taking the aging characteristic quantity of the characteristic curve of different elapsed time as an aging threshold value, and comparing the state parameter of the IGBT module, which is acquired in real time, with the dynamic aging characteristic quantity, so as to determine the state of the IGBT module. According to the invention, the problem of low monitoring accuracy of the IGBT module in the prior art can be solved.

Description

technical field [0001] The present application relates to the technical field of semiconductor testing, and in particular, to a method and device for monitoring the state of an IGBT module. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled voltage-driven power semiconductor device consisting of a bipolar triode (BJT) and an insulated gate field effect transistor (MOSFET). Due to the advantages of reduced on-voltage, high input impedance, and simple driving circuit, IGBT modules have become the core modules of many electronic devices. Due to the effects of electricity and heat during operation, the possibility of module failures continues to increase. Status evaluation is an important means of monitoring IGBT modules. If faults cannot be detected and protected in a timely and accurate manner, IGBTs will be permanently damaged. [0003] The IGBT module operating status monitoring can analyze the changes of relevant paramete...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2608
Inventor 赵家宽任延吉黄传伟
Owner JIANGSU HAIDONG SEMICON TECH CO LTD
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