Bipolar photodiode based on gallium nitride heterojunction thin film and preparation method thereof

A photodiode and heterojunction technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve problems such as integration and mass production that are difficult to achieve, and achieve the effects of excellent chemistry, good device reliability, and small size

Pending Publication Date: 2022-07-12
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these devices composed of nanostructures are considered difficult to integrate and mass-produce

Method used

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  • Bipolar photodiode based on gallium nitride heterojunction thin film and preparation method thereof
  • Bipolar photodiode based on gallium nitride heterojunction thin film and preparation method thereof
  • Bipolar photodiode based on gallium nitride heterojunction thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The specific implementation steps are as follows:

[0042] (1) A GaN heterojunction epitaxial wafer was grown by MOCVD on a 6-inch Si (111) substrate. The structure includes: 200 nm undoped AlN layer, 300 nm undoped Al 0.8 Ga 0.2 N layer, 500 nm undoped Al 0.6 Ga 0.4 N layer, 500 nm undoped Al 0.4 Ga 0.6 N layer, 300 nm undoped Al 0.2 Ga 0.8 N layer, 2 μm undoped GaN layer, 1 nm undoped AlN layer, 20 nm undoped Al 0.25 Ga 0.75 N layer, 3nm undoped GaN layer, 5 nm SiN layer, such as figure 1 shown;

[0043] (2) On the wafer surface described in step (1), the working area of ​​the device is defined by ultraviolet lithography. The working area of ​​this embodiment is 100×230 μm 2 . Then pass chlorine (Cl 2 ) Inductively Coupled Plasma (ICP) dry etching of areas outside the working area, Cl 2 The flow rate is 15 sccm, the power is 150W, and the etching depth is 150 nm to realize the isolation of a single device, such as figure 2 shown;

[0044] (3) The wafer...

Embodiment 2

[0052] The specific implementation steps are as follows:

[0053] (1) GaN heterojunction epitaxial wafers were grown by MOCVD on a 6-inch Si (111) substrate. The structure includes: 150 nm undoped AlN layer, 250 nm undoped Al 0.8 Ga 0.2 N layer, 300 nm undoped Al 0.6 Ga 0.4 N layer, 500 nm undoped Al 0.4 Ga 0.6 N layer, 400 nm undoped Al 0.2 Ga 0.8 N layer, 1.5 μm undoped GaN layer, 0.5 nm undoped AlN layer, 30 nm undoped Al 0.25 Ga 0.75 N layer, 4 nm undoped GaN layer, 4 nm SiN layer;

[0054] (2) On the wafer surface described in step (1), the working area of ​​the device is defined by ultraviolet lithography. The working area of ​​this embodiment is 100×230 μm 2 . Then pass chlorine (Cl 2 ) Inductively Coupled Plasma (ICP) dry etching of areas outside the working area, Cl 2 The flow rate is 15 sccm, the power is 150W, and the etching depth is 200 nm to realize the isolation of a single device;

[0055] (3) The wafer obtained in step (2) is degummed and cleaned....

Embodiment 3

[0063] The specific implementation steps are as follows:

[0064] (1) A GaN heterojunction epitaxial wafer was grown by MOCVD on a 6-inch Si (111) substrate. The structure includes: 100 nm undoped AlN layer, 200 nm undoped Al 0.8 Ga 0.2 N layer, 400 nm undoped Al 0.6 Ga 0.4 N layer, 400 nm undoped Al 0.4 Ga 0.6 N layer, 500 nm undoped Al 0.2 Ga 0.8 N layer, 1.2 μm undoped GaN layer, 0.7 nm undoped AlN layer, 15 nm undoped Al 0.25 Ga 0.75 N layer, 5 nm undoped GaN layer, 3 nm SiN layer;

[0065] (2) On the wafer surface described in step (1), the working area of ​​the device is defined by ultraviolet lithography. The working area of ​​this embodiment is 100×230 μm 2 . Then pass chlorine (Cl 2 ) Inductively Coupled Plasma (ICP) dry etching of areas outside the working area, Cl 2The flow rate is 15 sccm, the power is 150W, and the etching depth is 150 nm to realize the isolation of a single device;

[0066] (3) The wafer obtained in step (2) is degummed and cleaned. ...

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Abstract

The invention discloses a bipolar photodiode based on a gallium nitride heterojunction thin film and a preparation method of the bipolar photodiode. The main body structure of the gallium nitride heterojunction thin film is SiN / GaN / AlyGa1-yN / AlN / GaN. The cathode and the two-dimensional electron gas on the heterojunction interface form ohmic contact, and the semitransparent metal anode on the SiN dielectric layer and the gallium nitride heterojunction form a metal-insulator-semiconductor (MIS) structure. Due to opposite polarization electric fields in the heterojunction film, the MIS photodiode based on the gallium nitride heterojunction can generate light currents in different directions under excitation of ultraviolet light with different energies. The bipolar photodiode based on the gallium nitride heterojunction film on the silicon substrate is simple in process and stable in performance, can be compatible with a CMOS (complementary metal oxide semiconductor) process, and can be used as a high-performance photoelectric detection unit in a future multifunctional photoelectric integrated chip and system.

Description

technical field [0001] The invention relates to a photodiode in the technical field of semiconductor optoelectronics, in particular to a bipolar photodiode based on a gallium nitride heterojunction thin film and a preparation method thereof. Background technique [0002] The combination of photonics and electronics is the mainstream of next-generation system-on-chips, showing great potential in the fields of optical communication and optical computing. As an optoelectronic interface that converts optical signals into electrical signals, chip-scale semiconductor photodiodes (PDs) play an important role in optoelectronic integrated systems. However, conventional PDs fabricated based on bulk materials do not possess photocurrent polarity, which limits their versatile detection capabilities. Therefore, the introduction of bipolar PDs that can switch the polarity of photocurrent will become the development direction of optoelectronic integrated devices in the future. In recent ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/109
CPCH01L31/1852H01L31/1848H01L31/109H01L21/02381H01L21/0254H01L21/0262Y02P70/50
Inventor 卢红亮陈丁波
Owner FUDAN UNIV
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