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Mu LED unit light-emitting circuit, light-emitting control method thereof and display device

A technology of light-emitting circuits and light-emitting control signals, applied in static indicators, instruments, etc., can solve the problems of limited driving speed of GOA circuits and inability to be used for light-emitting

Pending Publication Date: 2022-07-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0007] In view of the above-mentioned analysis, the embodiment of the present application aims to provide a μLED unit light-emitting circuit, its light-emitting control method, and a display device to solve the problem that the driving speed of the existing GOA circuit is limited. A long part of the time cannot be used for lighting, which limits the improvement of the number of gray scales

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  • Mu LED unit light-emitting circuit, light-emitting control method thereof and display device
  • Mu LED unit light-emitting circuit, light-emitting control method thereof and display device
  • Mu LED unit light-emitting circuit, light-emitting control method thereof and display device

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Embodiment Construction

[0047] The preferred embodiments of the present application will be specifically described below with reference to the accompanying drawings, wherein the accompanying drawings constitute a part of the present application, and together with the embodiments of the present application, are used to explain the principles of the present application, but are not intended to limit the scope of the present application.

[0048] A specific embodiment of the present application discloses a μLED unit lighting circuit, including: a PWM signal generation circuit 402 , a lighting control circuit 404 and a μLED. In the following, refer to Figure 4 , the μLED unit light-emitting circuit will be described in detail.

[0049] refer to Figure 4 The PWM signal generating circuit 402 is configured to receive the lighting control signal EMEM and the comparison reference signal SWEEP and generate PWM signals with different pulse widths based on the lighting control signal EM and the comparison re...

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Abstract

The invention relates to a muLED unit light-emitting circuit, a light-emitting control method thereof and a display device, belongs to the technical field of semiconductors, and solves the problem that an existing GOA circuit is limited in driving speed and cannot be used for emitting light for a long time due to multiple times of starting when the resolution ratio is high. The circuit comprises a PWM signal generation circuit, a light-emitting control circuit and a mu LED, the PWM signal generation circuit receives a light-emitting control signal and a comparison reference signal and generates PWM signals with different pulse widths, and the comparison reference signal is a ramp signal; a light emission control circuit including a driving transistor for controlling the on-time of the driving transistor based on the PWM signals of different pulse widths to provide a driving current; and a [mu] LED for controlling a light emission time of the [mu] LED based on the driving current, in which an anode of the [mu] LED is connected to a drain of the driving transistor and a cathode of the [mu] LED is connected to a first power supply voltage. The combination of analog voltage driving and PWM driving modes is realized, and the regulation and control of high gray scale are satisfied.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular, to a μLED unit light-emitting circuit, a light-emitting control method thereof, and a display device. Background technique [0002] In recent years, as μLED has smaller device size, faster reaction speed, higher luminous efficiency, stronger stability and longer life than AMOLED (Active-matrix organic light emitting diode). Due to the advantages of service life and other advantages, the display application field based on μLED has developed rapidly, attracting more and more attention. In this field, oxide thin film transistor (TFT, Thin Film Transistor) materials represented by Low Temperature Poly-Silicon (LTPS, Low Temperature Poly-Silicon) have become active μLED displays due to their high mobility and high stability. important material. At present, for active μLED display technology, there are two most critical problems to be solved: [0003] 1. Mass tran...

Claims

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Application Information

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IPC IPC(8): G09G3/32
CPCG09G3/32
Inventor 耿玓苏悦李泠卢年端刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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