Method for manufacturing solar cell
A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problem of difficult peeling of pattern printing resist, peeling residue of pattern printing resist, third intrinsic semiconductor layer Damage and other problems to achieve the effect of reducing damage and reducing peeling residue
Pending Publication Date: 2022-07-29
KANEKA CORP
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Problems solved by technology
[0008] However, if the pattern printing resist on the back side is printed and fired (dried) after printing and firing (drying) the pattern printing resist on the light receiving side, the thermal history of the pattern printing resist on the back side It becomes 2 times, and the pattern printing resist on the back side becomes difficult to peel off
Therefore, the peeling residue of the pattern printing resist on the back side occurs
[0009] In addition, if the third intrinsic semiconductor layer on the light-receiving surface side of the semiconductor substrate is formed before the patterning (first patterning) of the first conductivity type semiconductor layer, the third intrinsic semiconductor layer will be formed in the subsequent manufacturing process. will be damaged
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[0034] Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same or equivalent part. In addition, there are cases where hatching, component symbols, etc. are omitted for convenience, and in this case, reference may be made to other drawings.
[0035] (Solar battery)
[0036] figure 1 It is the figure which looked at the solar cell which concerns on this embodiment from the back side. figure 1 The illustrated solar cell 1 is a back electrode type (also referred to as a back contact type, a back junction type) solar cell. The solar cell 1 includes an n-type (second conductivity type) semiconductor substrate 11 having two main surfaces, and has a first region 7 and a second region 8 on the main surface of the semiconductor substrate 11 .
[0037] The first region 7 has a so-called comb-like shape, and has a plurality of finger portions...
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The present invention addresses the problem of providing a method for manufacturing a solar cell in which peeling residues of a pattern printing resist are reduced and damage to a third intrinsic semiconductor layer during a manufacturing process is reduced. This method for manufacturing a solar cell comprises the following steps in this order: a step for forming a material film of a first intrinsic semiconductor layer and a material film of a first conductivity-type semiconductor layer on the rear surface side of a semiconductor substrate (11); a step in which a pattern printing resist is formed on the material film of the first conductivity type semiconductor layer in a first region (7) on the back surface side of the semiconductor substrate (11), and the pattern printing resist is not formed on the light receiving surface side of the semiconductor substrate (11); a step for forming a patterned first intrinsic semiconductor layer (23) and a patterned first conductivity-type semiconductor layer (25) in a first region (7) on the back surface side of the semiconductor substrate (11) using a pattern printing resist; a step for removing the pattern printing resist; and a step for forming a third intrinsic semiconductor layer (13) on the light receiving surface side of the semiconductor substrate (11).
Description
technical field [0001] The present invention relates to a method of manufacturing a back electrode type (back contact type) solar cell. Background technique [0002] Patent Document 1 discloses a back electrode type solar cell. Such a back electrode type solar cell includes: a semiconductor substrate functioning as a photoelectric conversion layer; a first intrinsic semiconductor layer, a first conductivity type semiconductor layer, and a first electrode layer stacked in this order on a part of the back surface side of the semiconductor substrate; The second intrinsic semiconductor layer, the second conductivity type semiconductor layer, and the second electrode layer are stacked in this order on the other portion on the back side of the semiconductor substrate. In addition, the solar cell includes a third intrinsic semiconductor layer and an optical adjustment layer stacked in this order on the light-receiving surface side of the semiconductor substrate. [0003] In gener...
Claims
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Login to View More IPC IPC(8): H01L31/18H01L31/0747
CPCH01L31/0747H01L31/18
Inventor 渡边真悟末崎恭
Owner KANEKA CORP