Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory device, memory system and programming operation method

A technology of a memory system and an operation method, applied in the field of memory devices, can solve the problems of long programming time and the like

Pending Publication Date: 2022-08-09
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the programming of the memory cells of the multi-programming state flash memory often adopts multi-pass programming in which the programming operation and the verification operation are alternately performed, and the programming time is relatively long.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device, memory system and programming operation method
  • Memory device, memory system and programming operation method
  • Memory device, memory system and programming operation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the embodiments provided herein are only used to illustrate the present invention, but not to limit the present invention. In addition, the embodiments provided below are part of the embodiments for implementing the present invention, rather than providing all the embodiments for implementing the present invention. In the case of no conflict, the technical solutions described in the embodiments of the present invention can be combined arbitrarily. implement.

[0037] It should be noted that, in the embodiments provided by the present invention, the terms "comprising", "comprising" or any other variations thereof are intended to cover non-exclusive inclusion, so that a method or apparatus including a series of elements not only includes the specified recited elements, but also other elements not explicitly listed, or e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memory device, a memory system and a program operation method. The memory device includes: a memory array having a plurality of memory blocks, each memory block being arranged to have a plurality of memory sub-blocks; each storage sub-block at least comprises one storage unit; and a control circuit coupled to the memory array, the control circuit is configured to determine a verify cycle count for performing a verify operation by programming memory cells in a first memory sub-block in a first memory block of the plurality of memory blocks to a target program data state during a non-last pass program while performing a multi-pass program on the first memory block; when the storage units in the other storage sub-blocks in the first storage block are programmed to the target programming data state by adopting the same programming and verification conditions for the first storage sub-block, at least the last verification operation corresponding to the verification cycle count is not executed in the non-last programming of the storage units in the other storage sub-blocks.

Description

technical field [0001] The present invention relates to the technical field of memory, and in particular, to a memory device, a memory system and a programming operation method. Background technique [0002] Non-volatile memory has been widely used in electronic devices in various fields. Flash memory is one of the most widely used non-volatile memories that can be electrically erased and reprogrammed. Flash memory can include memories of both NOR and NAND architectures, where the threshold voltage for each memory cell in the flash memory is changed to required levels for various operations such as read, program and erase. When operating the flash memory, an erase operation can be performed at a block level, a program operation can be performed at a page level, and a read operation can be performed at a memory cell level. Programming of multi-state flash memory is accomplished by identifying a number of different allowable threshold voltage ranges. Currently, multi-pass p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/04G11C16/34
CPCG11C16/10G11C16/3454G11C16/34G11C16/0483G11C16/3459G11C11/5628G11C16/32
Inventor 董志鹏梁轲
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com