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Etching machine for chip boundary and its etching method

A technology for etching machines and wafers, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problems of etching solution resistance, small space, and poor silicon needle effect.

Inactive Publication Date: 2004-09-29
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, the above-mentioned method has the following disadvantages (1) need to use an extra layer of photoresist (2) when using this single-wafer etching machine for etching, because the space between the wafer and the worktable is small, the gas is ejected from the groove and sprayed The gas released will form resistance to the etchant, resulting in too little rewet of the etchant, and the effect of removing the silicon needles on the edge of the wafer is not good.

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  • Etching machine for chip boundary and its etching method
  • Etching machine for chip boundary and its etching method
  • Etching machine for chip boundary and its etching method

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Embodiment Construction

[0046]Please refer to Figure 8 to Figure 10. FIG. 8 is a top view of the etching machine of the present invention. Fig. 9 is a sectional view taken along line K-K' of Fig. 8 . Fig. 10 is a sectional view taken along line L-L' of Fig. 8 . The etching machine of the present invention has the following components in total: a rotary chuck 30 with a work surface, and the work surface is provided with a gas ejection groove 32, an etchant rewetting groove 33 and a plurality of clamping pins 34; A clamping arm (not shown) and an etchant introduction device 36 .

[0047] First, nitrogen gas was ejected from the gas ejection groove 32 at a rate of 130 L / min. Then the silicon wafer 10 whose front is covered with sword mountains is placed above the worktable of the rotary chuck 30 with the clamping arm, and the front of the wafer faces the worktable, and the back of the wafer faces the etchant introduction device 36 . The cross-sectional structure of the silicon wafer 10 is shown in F...

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Abstract

The invention relates to a table for an etching machine suitable for etching an edge of a wafer. Since grooves for the etching liquid filtering back to are added to the perimeter of the grooves for spouting gas, thus it makes the gas pressure between the wafer and the surface of the table reduced. Moreover, the etching liquid filters back to the front face of the wafer easier, and the location, where the etching liquid filters back to, can be controlled.

Description

technical field [0001] The invention relates to an etching machine for the edge of a wafer, in particular to an etching machine which can effectively etch and remove the edge of the wafer. Background technique [0002] In the manufacturing process of dynamic random access memory (DRAM), in order to increase the yield, the method of full wafer exposure is adopted, so that more chips can be obtained on a single wafer. In this way, although the yield is improved, it also creates some process problems. Especially in silicon wafer etching deep groove (deeptrench) process. [0003] Please refer to Fig. 1, the manufacturing method of deep groove is as follows, a silicon wafer 10 is provided as a base, and then a silicon dioxide layer 12, a silicon nitride layer 14, and a boron glass layer are sequentially formed on the silicon wafer 10 , wherein the silicon nitride layer 14, the silicon dioxide layer 12, and the boron glass layer are called hard masks. A patterned photoresist is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302H01L21/306
Inventor 刘岳良
Owner WINBOND ELECTRONICS CORP