LED in III group nitride and its manufacturing method
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of affecting the light-emitting characteristics of components, reducing the effective carrier concentration of p-type nitrides, and low doping concentration, so as to improve current dispersion ability, reduction of hydrogen passivation, production and quality improvement
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[0015] figure 2 It is a cross-sectional view of the structure of a III-nitride light-emitting diode according to the present invention. Please refer to figure 2 , the present invention uses a method for manufacturing a III-nitride light-emitting diode to simultaneously illustrate the structure of a III-nitride light-emitting diode. First, an epitaxial structure is formed on the substrate 50, and the epitaxial structure may sequentially include: a low-temperature buffer layer 52 (also known as a nucleation layer), an n-type ohmic contact layer 54, a degenerate junction (DegenerateJunction) 72, a wide energy gap p-type confinement layer 60 , active layer 62 , n-type confinement layer 64 with wide energy gap, and n-type ohmic contact layer 66 . Next, the n-type conductive electrode 68 and the conductive electrode 70 are vapor-deposited to complete the fabrication of the III-nitride light-emitting diode of the present invention. Among them, the III-nitride light-emitting diod...
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