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Nonvolatile internal storage reliability test method and circuit

A technology of non-volatile memory and test method, applied in static memory, instruments, etc., can solve the problems of inability to distinguish the state "1, the storage unit storage information is invalid, and the storage unit information cannot be read out correctly.

Inactive Publication Date: 2005-09-28
MACRONIX INT CO LTD
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Problems solved by technology

The increase of the critical voltage will cause the increase of the leakage current (leakage current), and will make the stored information of the memory cell invalid
For example, when the state "1" is lower than a certain critical voltage, the state "1" or the state "0" cannot be distinguished due to the increase of the critical voltage; that is, the information stored in the memory cell cannot correct readout

Method used

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  • Nonvolatile internal storage reliability test method and circuit
  • Nonvolatile internal storage reliability test method and circuit
  • Nonvolatile internal storage reliability test method and circuit

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Embodiment Construction

[0019] The threshold voltage drift (threshold drift) and read current drift (read current drift) of the non-volatile memory with an insulating trap layer will increase with the retention time of the memory cell. And this drift phenomenon is related to the retention The logarithm of the time is roughly linear. The present invention utilizes the physical phenomenon of this offset to perform accelerated testing of the reliability of the storage unit.

[0020] figure 2 is a plot of threshold voltage shift versus read current shift and hold time. like figure 2 As shown, first of all, look at the shift phenomenon of the threshold voltage, which is represented by a diamond mark in the figure. As the holding time increases, it can be seen from the figure that the offset of the critical voltage also increases. For example, when the hold time is 100 seconds, the threshold voltage offset dVt is about 0.01V, and when the hold time reaches 100000 seconds, the corresponding threshold v...

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Abstract

The method includes the following steps. The relation curve between the grid voltage and the attenuation rate of the reading current is decided. The actual grid voltage and its relevant attenuation rate of the reading current are predicted. The accelerated test grid voltage and the test time relevant to the actual grid voltage are solved from the said relation curve. The test is carried out continuously in the test time number the accelerated test grid voltage in order to measure the reading current related as well as determine whether the memory is in effect or not. Thus, the reliability testing for the non-volatile memory is completed.

Description

technical field [0001] The present invention relates to a non-volatile memory testing circuit and method, and in particular to a non-volatile memory reliability test (qualification test) method and circuit with a trapping layer. Background technique [0002] Non-volatile memory (non-volatile memory), such as flash memory (Flash), generally uses a gate structure with a control gate and a floating gate, wherein the control gate is used to receive the voltage that controls the operation of the memory unit, and the floating gate The gate is used to store charge. Under this structure, because the floating gate is a conductor made of polysilicon, when the memory cell is programmed, the electrons injected into the floating gate will be uniformly distributed in the floating gate. Therefore, this memory cell with a floating gate structure can only store one bit. Afterwards, a memory cell structure in which an insulator is used to replace a floating gate has been proposed. When an ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00
Inventor 蔡文哲邹年凯黄兰婷汪大晖
Owner MACRONIX INT CO LTD
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