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Method for manufacturing micro electromechanical Fabry-perot device

A manufacturing method, micro-electromechanical technology, applied in light guides, optics, instruments, etc., can solve problems such as difficulty in meeting the precision requirements of process parameters, inability to manufacture micro-electromechanical Fabry-Perot devices, and lack of rigidity

Inactive Publication Date: 2006-03-29
DELTA ELECTRONICS INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0008] However, although this method will not damage the surface flatness of the substrate 302 because the etchant only quickly etches the adhesive layer 310, it is difficult to control the thickness of the adhesive layer 310 at about The accuracy requirement of 0.5nm, and when the substrate 308 is combined with the substrate 302, the material of the adhesive layer 310 is not hard compared with the silicon wafer or glass substrate, and it is easy to cause the thickness of the adhesive layer to change and change the Fabry. - the spacing d of the Perot device 300
[0009] Therefore, the aforementioned conventional methods of manufacturing Fabry-Perot devices using MEMS technology are difficult to meet the accuracy requirements for process parameters, and cannot produce MEMS Fabry-Perot devices that accurately meet the required output waveforms. Lo device

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  • Method for manufacturing micro electromechanical Fabry-perot device
  • Method for manufacturing micro electromechanical Fabry-perot device
  • Method for manufacturing micro electromechanical Fabry-perot device

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Embodiment Construction

[0044] Preferred embodiments of the present invention will be described below with reference to related drawings.

[0045] Figure 5A to Figure 5C It is a preferred embodiment of the manufacturing method of the MEMS Fabry-Perot device according to the present invention, showing a schematic cross-sectional view of its manufacturing procedure.

[0046] Such as Figure 5A As shown, firstly, a substrate 12 is provided, and the substrate 12 is composed of a silicon wafer or a glass substrate coated with a reflective film 12A. Next, a photomask 14 is covered on the base material 12, and the photomask 14 is used to define the coating area required for the subsequent procedure.

[0047] Then as Figure 5B As shown, using a film deposition method such as Physical Vapor Deposition (Physical Vapor Deposition; PVD) or Chemical Vapor Deposition (Chemical Vapor Deposition; CVD), deposition materials such as dielectric materials or metal materials (such as silver or aluminum) 18 is depos...

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Abstract

The invention is a manufacturing method for micro-electromechanical Fabry-Perot device, it includes following steps: provides two different backings, forms sediment at the preset region on the backing by film depositing method, separates the backings combining with the sediment. It adds a film thickness monitor when the film depositing to control the thickness of the sediment, makes the thickness of the sediment between the backings is equal to the interval needed by the Fabry-Perot device.

Description

technical field [0001] The present invention relates to a kind of microelectromechanical type Fabry-Perot device (MEMS Fabry-PerotDevice) manufacturing method, relate in particular to a kind of MEMS type Fabry-Perot device that can accurately locate two parallel components. Manufacturing method of Perot device. Background technique [0002] Fabry-Perot devices are usually used in optics such as tunable filters (Tunable Filters), wavelength lockers (Wavelength Lockers) and tunable lasers (Tunable Lasers) because they can filter out multiple wavelengths of specific frequencies. element. Such as figure 1 As shown, a Fabry-Perot device 100 is formed by combining two parallel members 102 and 104 with a plurality of spacer elements 106 with a thickness d between them. One surface of the components 102 and 104 needs to be coated with a reflective film to form opposite parallel mirror surfaces 102A and 104A. When the incident light enters the device 100 at an angle α, it will re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/26G02B6/132G02B5/28G02B6/293
Inventor 张绍雄张起豪
Owner DELTA ELECTRONICS INC
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