Power amplifier containing distributed capacitance

A power amplifier and capacitor technology, applied in the field of power amplifier integrated circuits containing distributed capacitors, can solve the problems of inefficiency, increasing the complexity of the circuit layout of the power amplifier 30, and the inefficiency of the power amplifier circuit layout.

Inactive Publication Date: 2006-04-05
MEDIATEK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the use of the bypass capacitors 36a-36c in the power amplifier 30 is not only inefficient, but the use of the bypass capacitors 36a-36c will also increase the complexity of the circuit layout of the power amplifier 30
[0006] Generally speaking, existing power amplifiers increase the stability of the circuit at the cost of sacrificing gain, however, such an approach is very inefficient
Not only that, but the circuit layout of existing power amplifiers is also very inefficient

Method used

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Embodiment Construction

[0031] Please refer to image 3 , image 3 It is a circuit diagram of the power amplifier 50 of the preferred embodiment of the present invention. The power amplifier 50 includes a plurality of heterojunction bipolar transistors 52a-52n, and each transistor 52a, 52b, or 52n includes a finger-shaped emitter and a finger-shaped base, respectively. The number of transistors included in the power amplifier 50 is not limited to image 3 As shown in three, the power amplifier 50 of the present invention may include less than three or more than three HJBTs. The power amplifier 50 also includes a plurality of ballast resistors 54a-54n, and each ballast resistor 54a-54n is respectively corresponding to a transistor 52a-52n. It can still run stably when the current or power is quite large. The power amplifier 50 also includes a capacitor 56 for coupling an RF signal from an RF node 58 to the bases of the plurality of transistors 52a-52n. The capacitance of the capacitor 56 is relat...

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Abstract

The IC includes base electrodes of multiple transistors, multiple ballast resistances corresponding to the said transistors, and a capacitor. One end of each ballast resistance is connected to corresponding base electrode of transistor, and the other end is connected to a DC node. One end of the capacitor is connected to a radio frequency node, and the other end is connected to base electrodes of multiple transistors.

Description

technical field [0001] The present invention relates to a power amplifier integrated circuit used in wired or wireless communication devices, in particular to a power amplifier integrated circuit containing distributed capacitors. Background technique [0002] In recent years, power amplifier integrated circuits have been widely used in various wired or wireless communication devices, and some power amplifier integrated circuits containing heterojunction bipolar transistors can operate at high junction temperatures. temperatures) environment. However, a high junction temperature will reduce the reliability of the power amplifier integrated circuit, thereby limiting the maximum current that the power amplifier integrated circuit can withstand during operation, and of course also limiting the maximum power that the power amplifier integrated circuit can withstand during operation. [0003] When the current in the power amplifier integrated circuit is quite large, the power am...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/213H01L27/00H03F3/21H03F3/68
CPCH03F3/211H03F2200/75H03F2203/21112
Inventor 赵镇旭薛红喜
Owner MEDIATEK INC
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