Double scanning thin film processing system

Abstract

The present invention describes a deposition system. The deposition system includes a deposition source that generates a deposition flux containing neutral atoms and molecules. A shield defining an aperture is located in the path of the deposition flow. The shield passes the deposition flux through the aperture and virtually blocks the deposition flux from propagating anywhere else behind the shield. There is an underlying support near the shield. A dual scanning system utilizes first and second motions to scan the underlying support associated with the well.

Description

[0001] related application [0002] This application was claimed prior to Provisional Patent Application No. 60 / 217,049, filed July 10, 2000, the entire specification of which is hereby incorporated by reference. This application is also related to Provisional Patent Application No. 60 / 266,114, filed February 2, 2001, the entire specification of which is hereby incorporated by reference. technical field [0003] The present invention generally relates to thin film deposition and etching systems. In particular, the present invention relates to methods and apparatus for depositing thin films very uniformly or etching materials at very uniform etch rates. Background technique [0004] There are generally three techniques for depositing thin films onto substrates. These techniques are evaporation, magnetron sputtering and ion beam deposition. figure 1 A schematic diagram of a prior art electron beam vapor deposition system 10 is shown. The steam system 10 is housed in a vacu...

AI Technical Summary

Problems solved by technology

However, there are practical limitations on the size of the target and the distance from the target to the substrate

Thin films of higher uniformity are not practically achievable with these existing technologies

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