Method for mfg. high voltage element

Abstract

A manufacturing method of a high-voltage element, which firstly provides a substrate, wherein a gate structure of a high-voltage element has been formed on the substrate. Then, after the first thermal process is performed, a first doped region is formed in the substrate on both sides of the gate structure of the high voltage element. Afterwards, a spacer is formed on the side of the gate structure of the high voltage device. And an oxide layer is formed on the gate structure of the high voltage element and on the surface of the first doped region. Then, after performing a second thermal process, a second doped region is formed in the substrate on both sides of the spacer.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor device, and in particular to a manufacturing method of a high voltage device (High Voltage Device). Background technique [0002] High-voltage components, as the name suggests, are components that can withstand higher bias voltages, which means that the breakdown voltage of high-voltage components will be higher than that of ordinary components. High voltage components are generally preferred in nature by having a higher breakdown voltage. In addition, high voltage components are often fabricated on the same chip along with general components. A typical structure of a high voltage device includes a gate, a source / drain region and a lightly doped drain (LDD). Wherein, the lightly doped drain region of the high voltage element surrounds the source / drain region. [0003] Figure 1A to Figure 1D As shown in FIG. 1 , it is a schematic cross-sectional view of a manufacturing proces...

AI Technical Summary

Problems solved by technology

In this way, the breakdown voltage of high-voltage components will not be effectively improved

Images