Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Insulated-gate bipolar transistor

A bipolar transistor and insulated gate technology, which is applied in the field of power semiconductor devices, can solve problems such as crystal defects, yield reduction, leakage current reliability, etc., and achieve the effect of low turn-on voltage characteristics

Inactive Publication Date: 2006-07-05
KK TOSHIBA
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will induce crystallization defects at the edge of the trench, resulting in a decrease in reliability and a decrease in yield due to leakage current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated-gate bipolar transistor
  • Insulated-gate bipolar transistor
  • Insulated-gate bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] figure 1 It is a plan view of IGBT100a of an embodiment, figure 2 with image 3 respectively figure 1 I-I' and II-II' sectional views. On the surface of the P-silicon substrate (anode emitter layer) 1, an n-type layer (n-base layer) 2 with a resistivity of 50Ω·cm or more is formed, and a p-base layer 3 with a depth of about 4 μm is formed on the surface . A trench 5 is formed, which penetrates the p base layer 3 to a depth reaching the n base layer 2 , and forms a gate electrode 6 embedded in the trench 5 through the gate insulating film 11 . Hereinafter, the gate electrode 6 is also referred to as an insulating slot gate or simply as a slot gate.

[0038] Such as figure 1 As shown, the insulating trench gate 6 has an elongated rectangular shape on the upper surface, and a plurality of them are arranged at predetermined intervals in the width direction (y direction). The slot grid 6 is also arranged in multiples in its length direction (x direction), for exam...

Embodiment 2

[0050] Image 6 It is a plan view of IGBT100b of Embodiment 2, and its I-I' and II-II' sections are the same as figure 2 and image 3 same. In Embodiment 2, the shape of the cathode emitter layer 4 is different from Embodiment 1. That is, like the cathode electrode 7 , the cathode emitter layer 4 is formed on both ends of the insulating trench gate 6 as an impurity diffusion layer connecting between the plurality of insulating trench gates 6 arranged in the y direction. The situation that the cathode emitter layer 4 is opposite to the three sides of each end of the groove grid is the same as that of the first embodiment.

[0051] According to such a structure, in addition to obtaining the same effect as in Example 1, the accuracy of alignment with the cathode emitter layer 4 can be eased when forming the trench 5, so that the manufacturing margin can be increased.

Embodiment 3

[0053] Figure 7 is a plan view of IGBT100c of Example 3, Figure 8 Is its I-I' profile. II-II' section and image 3 same. In this embodiment, the cathode emitter layer 4 is formed as an impurity diffusion layer continuous between two adjacent insulating trench gates 6 in the x direction, and is shared by the two insulating trench gates 6 . The situation that the cathode emitter layer 4 is opposite to the sides 3 of the respective ends of the groove grid is the same as that of the first embodiment. Cathode emitter layer 4 dispersedly formed in the y direction serves as conduction between cathode electrode 7 and p base layer 3 .

[0054] According to such a structure, in addition to obtaining the same effect as in Example 1, the accuracy of alignment with the cathode emitter layer 4 can be eased when forming the trench 5, so that the manufacturing margin can be increased.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An insulated gate bipolar transistor includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type formed on a top surface of the first semiconductor layer, a base layer of the first conductivity type formed on a top surface of the second semiconductor layer, a plurality of gate electrodes each of which is buried in a trench with a gate insulation film interposed therebetween, the trench being formed in the base layer to a depth reaching said second semiconductor layer from a surface of the base layer, each the gate electrode having an upper surface of a rectangular pattern with different widths in two orthogonal directions, the gate electrodes being disposed in a direction along a short side of the rectangular pattern, and emitter layers of the second conductivity type formed in the surface of the base layer to oppose both end portions of each the gate electrode in a direction along a long side of the rectangular pattern; the first host electrode connects with emitter layers and base layers; and the second host electrode forming at the rear face of the first semiconductor layer.

Description

technical field [0001] The present invention relates to a power semiconductor device, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, hereinafter referred to as IGBT). Background technique [0002] Conventionally, IGBTs have been known as low-loss power semiconductor elements. Among them, compared with the classic planar gate IGBT, the trench gate IGBT has the following advantages: low channel resistance can be obtained by arranging multiple miniaturized unit cells in the chip , No parasitic JFET (JunctionField Effect Transistor: Junction Field Effect Transistor) is formed in the structure, so there is no voltage drop caused by pinchoff, and low turn-on voltage characteristics can be obtained. [0003] Figure 15 is a plan view of an existing trench-gate IGBT, Figure 16 Is its I-I' profile. in p + An n-type layer 2 is formed on the n-type silicon substrate, and a p-type base layer (base layer) 3 with a depth of about 4 μm is for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L25/07H01L29/06H01L29/423
CPCH01L29/4238H01L29/7397H01L29/0696
Inventor 松田正
Owner KK TOSHIBA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com