Electronic source and imaging device and method for them holding activation station
An imaging device and electron source technology, applied in the manufacture of discharge tubes/lamps, components of discharge tubes/lamps, cathode ray tubes/electron beam tubes, etc., can solve complex operations, rising manufacturing costs of imaging devices, and time-consuming And other issues
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Embodiment 1
[0161] Figures 14A to 14D The electron source in this example is schematically illustrated. Such as Figures 14A to 14D As shown, the surface conduction electron emission device of the electron source of this embodiment is composed of a pair of device electrodes 2 and 3 and a conductive thin film 4 including an electron emission region 5, and the means for supplying an active substance is composed of a pair of electrodes 2 And 6, a thin film resistance heater 7 and an activation material source 8 constitute. Although the device of this example is similar to Figures 1A to 1C The difference between the former and the latter is that a pair of devices for supplying the active substance are arranged along respective sides of the electron emission region.
[0162] Figure 14A is a schematic floor plan of this embodiment, and Figure 14B , 14C and 14D are schematic cross-sectional views taken along lines 14B-14B, 14C-14C and 14D-14D, respectively. The device electrode 3 and ...
Embodiment 2
[0187] Prepared as in the case of Example 1 with Figures 14A to 14D An electron source of the structure shown, and then examine the performance of the electron source. The electron source is driven to work without applying any voltage between the device electrode 2 and the electrode 6 for supplying the active species. The performance at the initial operation was equal to that of the electron source of Example 1, although the reduction ratios of If and Ie were δIf (1 hour) = 20% and δIe (1 hour) = 25%, respectively.
[0188] Thereafter, when the thin film resistive heater 7 is heated by applying a pulse voltage between the device electrode 2 and the electrode 6 for supplying the active substance and energizing the thin film resistive heater 7, another voltage is applied to the device electrodes 2 and 3 Between, to drive the electron source to work. The pulse voltage applied between the device electrode 2 and the electrode 6 for supplying the active substance was a rectangula...
Embodiment 3
[0191] The electron source prepared in this example has basically the same structure as the electron source of Example 1. Therefore, refer to the attached Figure 16H , 16J 16K and 16K illustrate only manufacturing steps different from their corresponding parts of Embodiment 1.
[0192] Steps (a) to (g) of Example 1 were followed. Thereafter, the following steps are performed.
[0193] (h) Photoresist (AZ-1370) is applied thereon by means of a spin coater and subjected to a pre-baking process at 90° C. for 30 minutes to produce a photoresist layer 74; thereafter , expose it to light, photochemically develop it and undergo a post-baking process to produce an opening 76 having a shape corresponding to the shape of the active material source to be formed ( Figure 16H or along Figure 14A Section of line 14C-14C in).
[0194] (i) Apply an aqueous solution containing 2% polyvinyl alcohol (PVA) thereon with a spin coater, and be heated and dried at 60° C. for 10 minutes to pr...
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