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Method for making partially self-aligned contact window

A manufacturing method and contact window technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex contact windows, time-consuming and manufacturing costs, etc., to reduce resistance, avoid short circuits, and increase size. Effect

Inactive Publication Date: 2006-11-29
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the formation of self-aligned contacts by the above method is complex, time-consuming and cost-intensive

Method used

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  • Method for making partially self-aligned contact window
  • Method for making partially self-aligned contact window
  • Method for making partially self-aligned contact window

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Figure 2A to Figure 2C It is a cross-sectional view of the fabrication process of a partially self-aligned contact window according to a preferred embodiment of the present invention.

[0033] Please refer to Figure 2A , provide a substrate 200, and form a plurality of gates 202 on the substrate 200, the material of which is polysilicon, for example, and its thickness is between 2000 angstroms and 5000 angstroms, for example, wherein the design principle (Design Rule) of the distance between gates 202 includes reserved One alignment error margin (Misalign Margin). Next, a liner (Liner) 206 is formed on the sidewall of the gate 202, and its material is, for example, silicon oxide. Subsequently, spacers 208 are formed on the sidewalls of the lining layer 206 . The shape of the spacer 208 is preferably conformal, and the material of the spacer 208 must have the characteristics of a lower etching rate than the dielectric layer formed later, that is, the spacer 208 and ...

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Abstract

A method for partial self-aligning with contact window is to form several grids at a base and a lining on the grid sidewall again a conformal silicon nitride clearance wall on the lining sidewall then to form doped areas on the bases between the grids, and form auto alignment siliconized metallic layer on top of the grids and surface of the doped areas after that to form a dielectric layer covering these grids and to be patternized to form a contact window open and expose the auto-alignment siliconized metallic layers on the base between grids then cover a contact window clearance wall on the open sidewall and plugs inside the open.

Description

technical field [0001] The present invention relates to a method of manufacturing a contact, and in particular to a method of manufacturing a partial self-aligned contact. Background technique [0002] At present, the process resolution of ultra-large-scale integrated circuit (ULSI) has been developed to below 0.18 microns, that is, the ratio of depth to width or diameter is getting larger and larger, and the contact windows of metal and semiconductor are getting smaller and smaller. The small line width and the prevention of misalignment of contact windows have become the focus of research and development in the semiconductor industry. In addition, the self-aligned metal silicide process is also widely used in the production of various components. [0003] It is known that in order to overcome the increasingly smaller line width and prevent misalignment of contact windows, such as Figure 1A and Figure 1B The process shown is used for the fabrication of contact windows. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/28H01L21/302
Inventor 钟嘉麒
Owner MACRONIX INT CO LTD