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Optical proximity correction for phase shifting photolithographic masks

A photolithographic mask and phase shift technology, which is applied in the fields of phase shift mask and proximity correction, optical proximity correction and etching proximity correction, can solve the problems of large data processing resource burden, impractical repeated operation, etc., and achieve improved proximity correction Effect

Inactive Publication Date: 2007-03-07
SYNOPSYS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The burden on data processing resources for repeated operations on such a large number of graphs can be significant and in some cases make the repeated operations impractical

Method used

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  • Optical proximity correction for phase shifting photolithographic masks
  • Optical proximity correction for phase shifting photolithographic masks
  • Optical proximity correction for phase shifting photolithographic masks

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0120] FIG. 17 shows a portion of a layout 1700 extending through the area shown. The layout includes a number of graphics defined using phase shifters. Several aspects of the layout should be noted.

[0121] In particular, cutout 1710 should be contrasted with cutout 1740 . In the case of cutout 1710, a diagonal cut of the type used for cutout 1740 is not possible, so straight cuts are used instead. Also, adjustments in cutout 1710 for proximity correction include compensation of line segment 1711 in a direction orthogonal to adjacent line segment 1712 on the phase shift pattern.

[0122] In a similar vein, the cuts are extended where appropriate, for example cut 1720 is an extended corner cut adjoining the no longer clearly visible cut of the endcap.

[0123] The completed layout also includes several phase violations, two of which, phase violation 1750 and phase violation 1760, are called out. Another phase conflict also exists near the notch 1730 . If the cutout 1730 ...

example 2

[0129] FIG. 21 shows a portion of a layout 2100 extending beyond the sides shown. The layout includes a number of graphics defined using phase shifters as shown. Portions of the layout shown have been fully phase shifted without conflict.

[0130] 22 and 23 show the phase shift pattern and trimming pattern, respectively, after OPC has been performed. Specifically, the layout 2200 of FIG. 22 illustrates the phase shifting pattern after OPC, and the layout 2300 in FIG. 23 illustrates the trimming pattern after OPC.

[0131] Finally, FIG. 24 includes a simulation 2400 of a printed image of phase layout 2200 used in combination with trimming layout 2300 . Target layouts are shown as dark blue / black lines.

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PUM

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Abstract

A method for producing a computer readable definition of photolithographic mask used to define a target pattern is provided. The phase shift mask patterns include phase shift windows, and the trim mask patterns include trim shapes, which have boundaries defined by such sets of line segments. For a particular pair of phase shift windows used to define a target feature in a target pattern, each of the phase shift windows in the pair can be considered to have a boundary that includes at least one line segment that abuts the target feature. Likewise, a complementary trim shape used in definition of the target feature, for example by including a transmissive region used to clear an unwanted phase transition between the particular pair of phase shift windows, includes at least one line segment that can be considered to abut the target feature. Proximity correction is provided by adjusting the position of the at least one line segment on the boundary of a phase shift windows in said pair which abuts the target feature, and by adjusting the position of the at least one line segment on the boundary of the complementary trim shape which abuts the target feature.

Description

technical field [0001] The present invention relates to the use of photolithographic masks to fabricate small-scale features of objects such as integrated circuits. More particularly, the present invention relates to phase shift masks and proximity correction for complex layouts of integrated circuits and similar objects, including but not limited to optical proximity correction and etch proximity correction. Background technique [0002] Phase-shift masks have been used to create small-scale features in integrated circuits. Typically, the pattern has been limited to selected devices with a design pattern of small critical dimensions. See, eg, US Patent No. 5,766,806. [0003] While the fabrication of small-scale features in integrated circuits has brought improved speed and performance, it is expected that phase-shift masks will be more widely used in the fabrication of such devices. However, the extension of phase-shift masks to more complex design patterns has resulted...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/00G03F1/14G03C5/00G03FG03F1/30G03F1/36G03F7/20G03F9/00G06F17/50H01L21/027
CPCG03F1/30G03F1/36G03F1/70
Inventor 克里斯托夫·皮拉特米歇尔·L·科特
Owner SYNOPSYS INC