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Method for stabilizing material layer property

A technology for stabilizing materials and material layers, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems that affect the stability and pass rate of semiconductor components, decline in product pass rate, and pollute the surface of the wafer, etc., to improve pass Efficiency and stability, stable material layer, and the effect of reducing pollution

Inactive Publication Date: 2007-03-28
POWERCHIP SEMICON CORP
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Problems solved by technology

Such a difference will have a certain degree of impact on the subsequent process, which in turn will affect the stability and yield of semiconductor components
[0004] In addition, when the wafer on which the material layer has been formed is put back into the wafer box for storage, if the surface of the wafer releases residual gas from the reaction to produce the so-called outgassing phenomenon, the gas diffused from the wafer will pollute other untreated wafers. The surface of the processed wafer, when these contaminated wafers are deposited with material layers, the material layer will contain both the original material and the contaminants coated on the chip, resulting in a decline in the pass rate of the product

Method used

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  • Method for stabilizing material layer property
  • Method for stabilizing material layer property
  • Method for stabilizing material layer property

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Embodiment Construction

[0022] FIG. 1 is a diagram showing a process equipment for forming a material layer according to a preferred embodiment of the present invention. FIG. 2 is a flow chart showing a process for forming a material layer in a preferred embodiment of the present invention.

[0023] Please refer to FIG. 1 and FIG. 2 at the same time, a plurality of wafers are provided (step 200), and these wafers are stored in a wafer box 100, and the wafer box 100 is, for example, a wafer box that can store 25 wafers at the same time. Then, the wafers are transferred from the wafer cassette 100 to the reaction chamber 102 by using a robotic arm (Robot Blade) respectively (step 202). In other words, the wafers stored in the wafer cassette 100 will be transferred to the reaction chamber 102 one by one for reaction . The reaction chamber 102 is, for example, a chemical vapor deposition reaction chamber, a sputtering reaction chamber, an evaporation reaction chamber or a furnace tube reaction chamber. ...

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Abstract

This invention discloses a method for stabilizing material layers which sends multiple wafers stored in a wafer box into a reaction chamber orderly for deposition of the material layer then to transfer and store them in a wafer box continuously inlet by a special gas till all the wafers in it are treated. Since in the process of depositing the material layer, there are material layer wafers formed in the wafer box, the quality of the material layer can be stabilized effectively to reduce pollution from the air-out.

Description

technical field [0001] The present invention relates to a semiconductor process, and in particular to a method of stabilizing properties of a material layer. Background technique [0002] Thin film deposition is one of the most important steps in semiconductor processing. Generally speaking, semiconductor components are composed of thin films (material layers) with different layers and thicknesses. The stability of the properties of these thin films (material layers) will affect the performance of semiconductor components, so how to stabilize the properties of the material layers is very important in the semiconductor process. [0003] For example, when depositing a material layer, a plurality of wafers are usually stacked in a wafer box, and then the robotic arm is used to sequentially take out the wafers from the wafer box and transfer them to the reaction chamber for the material layer deposition step. Afterwards, the wafer formed with the material layer is sent back to...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3105H01L21/321H01L21/68H01L21/00
Inventor 陈菁华
Owner POWERCHIP SEMICON CORP
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