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Fault-reason analyzing method

A technology of cause analysis and defects, applied in semiconductor/solid-state device testing/measurement, etc., can solve problems such as yield damage, poor light element detection ability, poor quantitative ability, etc., and achieve the effect of improving product qualification rate and reliability

Inactive Publication Date: 2007-06-13
POWERCHIP SEMICON CORP
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Problems solved by technology

However, due to the shortcomings of energy dispersive spectrometers such as low resolution, poor quantitative ability, and poor detection ability for light elements, it cannot effectively detect some small defects (below 0.2 microns), and can only be used for large particle defects. Analysis, with the continuous shrinking of the process scale, the defects with small sizes but great damage to the yield are also increasing, and the applicability of this method is also declining

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Embodiment Construction

[0031] Please refer to FIG. 2 , which is a schematic diagram of a defect cause analysis method 100 in the present invention. As shown in Fig. 2, at first, carry out sampling 110, obtain a test sample, carry out defect inspection (defect inspection) 120 by this test sample, and carry out defect classification 130 according to the result of inspection, and adopt according to different defect types Appropriate instruments / methods to perform line chemical composition analysis 140.

[0032] In a preferred embodiment of the present invention, the defects on the test sample are roughly divided into three categories according to their size and location, and the chemical composition analysis 140 is performed in three different ways. Among them, when the defect is mainly located in the lower layer of the test sample, it belongs to the first defect type; particle), it belongs to the second defect type, and finally, the defect is also located on the surface of the test sample but the def...

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Abstract

The method includes following steps: providing a sample, where there are multiple defects on surface of the sample; next, carrying out a defect test in order to detect sizes and positions of defects; then, carrying out analysis of chemical composition for samples; carrying out spectrum analysis based on result of analysis of chemical composition; finally, discriminating reason of producing defects based on result of spectrum analysis.

Description

technical field [0001] The invention relates to a defect root analysis method, in particular to a defect root analysis method for large-scale semiconductor wafers. Background technique [0002] In the semiconductor production process, small particles or defects are often generated due to some unavoidable reasons. With the continuous shrinking of the component size and the continuous improvement of the circuit integration in the semiconductor process, these extremely small defects or particles The impact of integrated circuit quality is also becoming more and more serious. Therefore, in order to maintain the stability of product quality, it is usually necessary to carry out defect detection for the semiconductor components produced during the various semiconductor processes, so as to analyze the root causes of these defects based on the detection results, and then to further pass the process parameters. Adjustment to avoid or reduce the generation of defects, so as to achiev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
Inventor 林龙辉
Owner POWERCHIP SEMICON CORP