Electrostatic discharge preventing method for display and electrostatic discharge preventing device

Abstract

A protective method and circuit distribution for electrostatic discharge of display device, which contains dividing a first input power line into plurality of second input power lines, setting an electrostatic protector around each second input power line for protecting from electrostatic discharge passing second power line, merging above mentioned second input power line into a third input power line.

Description

technical field [0001] The present invention relates to an electrostatic discharge (ESD) protection method of a display and an electrostatic discharge protection device thereof, in particular to an electrostatic discharge protection method and device capable of improving ESD tolerance. Background technique [0002] A liquid crystal display (LCD) is a flat-panel display, which includes two substrates with transparent electrodes and a liquid crystal layer sandwiched between the two substrates. The two substrates are generally a substrate formed with a thin film transistor. material and a substrate formed with color filters. In a liquid crystal display, the light passing through the liquid crystal layer can be controlled by changing the voltage applied to the liquid crystal layer. [0003] N gate lines and M data lines interlaced with each other are formed on the thin film transistor substrate, and a plurality of pixels are defined in an N×M matrix. A pixel electrode is forme...

AI Technical Summary

Problems solved by technology

The specific circuit layout of the electrostatic discharge protection device generally adopts a lateral layout, as shown in Figure 2, to avoid the original input signal line T i -T o , but this is not only inefficient in the use of layout area, but also when the electrostatic discharge current from the input terminal T i When flowing in, since each NMOS transistor MN, or PMOS transistor MP and the input signal line T i -T o The distances are not equal, and the resulting equivalent resistance is also different. Therefore, when the electrostatic discharge current enters the circuit, the current will choose the smallest path as the preferential conduction path. Therefore, in Figure 2, it is closest to the input signal line T i -T o The MOS transistors will be turned on first to withstand the electrostatic discharge current, and then the next MOS transistors will be turned on sequentially, so that these are closer to the input signal line T i -T o The MOS transistor will withstand a large electrostatic discharge current and easily cause damage, and when the MOS near the input terminal (MP i , MN i ) Once damaged, the entire electrostatic discharge protection circuit will even be affected and lose its function

Images