High temperature reliability measuring device and method for integrated semiconductor module

Abstract

The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.

Description

technical field [0001] The present invention relates to a device and method for measuring the reliability of integrated semiconductor components at high temperatures and, in particular, to a method for finding out the reliability of semiconductor circuits during high-speed testing. Background technique [0002] Particularly in integrated semiconductor circuits, high reliability also in thin-film technology represents a very important factor during production and subsequent use. Many tests are therefore carried out during manufacture in order to describe the quality of the individual products as accurately as possible, but also to give the quality of the individual manufacturing processes. [0003] Since the structure width of the semiconductor circuit is considerably reduced by the advanced integration density, corresponding structures on highly integrated circuit loops are subjected to very high current densities and / or temperatures during operation. At such high current d...

AI Technical Summary

Problems solved by technology

[0010] Disadvantageously, however, the distance between the structure to be tested or the semiconductor component HBE and the temperature sensor or aluminum labyrinth TS is too great and one or more insulating interlayers are present in this device for measuring the reliability of the integrated semiconductor component. , these insulating interlayers represent a large thermal resistance

It is therefore not possible to describe with sufficient accuracy and directness the temperatures involved in the HBE-relevant regions directly located on structures or semiconductor components to be tested

In addition, at relatively high temperatures, a classification of the aluminum or the temperature sensor TS occurs, so that an accurate and reproducible temperature determination is not possible after relatively long stress reactions

A further disadvantage of this conventional arrangement is that the position requirement / contact area requirement is very large, the position requirement is in principle caused by the 4-point resistance measurement and thus the required connection area (path)

Images