Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device mfg. method and semiconductor device thereby

A semiconductor and MOS transistor technology, applied in the field of semiconductor devices manufactured according to this method, can solve the problems of high cost, many manufacturing processes, and low efficiency

Inactive Publication Date: 2003-03-12
SEIKO EPSON CORP
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when high-voltage transistors or low-voltage transistors are formed by separate processing, the efficiency is low and the cost is high due to many manufacturing processes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device mfg. method and semiconductor device thereby
  • Semiconductor device mfg. method and semiconductor device thereby
  • Semiconductor device mfg. method and semiconductor device thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0066] 1. Examples of common manufacturing processes

[0067] First, in order to explain the manufacturing process of the semiconductor device of the present invention, a general manufacturing process constituting its premise will be described. Figure 1 to Figure 28 A schematic cross-sectional view showing a general manufacturing process constituting the premise of the semiconductor manufacturing apparatus of the present invention. The fabrication process is an example of high-voltage and low-voltage complementary metal-oxide-semiconductor (CMOS) transistors on the same substrate process. A region HV in each figure represents a high-voltage transistor region, and a region LV represents a low-voltage transistor region. The region HVp represents a high-voltage P-channel MOS transistor (hereinafter referred to as "pMOS") region, and the region HVn represents a high-voltage N-channel MOS transistor (hereinafter referred to as "nMOS") region. In addition, the region LVp represen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for manufacturing a semiconductor device of high voltage MOS transistor and low voltage transistor with different voltage resisted drain on an identical substrate, and relates to semiconductor device manufactured based on the method which first creates a gate electrode on a center portion of a gate oxide film formed on a substrate, forms a silicon oxide film over the whole surface of the substrate including the gate electrode, and etches the whole face of the silicon oxide film, so as to form a side wall of the silicon oxide film on a side surface of the gate electrode. Then implanting an impurity ion according to a channel of a transistor, a resist is formed in advance on at least a peripheral portion of the gate oxide film in a high voltage MOS transistor when a drain area and a source area is formed, so as to prevent implantation of the impurity ion in an under-layer region below the peripheral portion of the gate oxide film. This device enables both a high voltage MOS transistor and a low voltage MOS transistor to be efficiently formed on the identical substrate without damaging the characteristics of the respective transistors.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device having a high-voltage MOS (metal oxide semiconductor) transistor and a low-voltage MOS transistor on the same substrate with different withstand voltage drains, and a semiconductor device manufactured according to the method. technical background [0002] In general, integrated circuits (hereinafter referred to as "driver ICs") used to drive image sensors, LCDs, and printing heads, etc., have a withstand voltage between the drain and source ( Or simply referred to as "drain withstand voltage") high-voltage MOS transistor drive output unit with strong capability, and a low-voltage MOS transistor control drive output unit with poor drain withstand voltage capability that can be used at a power supply voltage below several volts logical unit. In addition, in the following description, a MOS transistor may be simply referred to as a transistor in some cases. [0003] For driver IC...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/266H01L21/8238H01L27/02H01L27/092
CPCH01L21/823857H01L21/823842H01L27/0266H01L21/823814
Inventor 神田敦之芳贺泰
Owner SEIKO EPSON CORP