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Semiconductor laser element

A technology of laser components and semiconductors, applied in semiconductor lasers, laser parts, lasers, etc., can solve problems such as reducing the quality of recording signals

Inactive Publication Date: 2003-03-12
SHARP FUKUYAMA LASER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This degrades the quality of the recorded signal of the optical disc device using the semiconductor laser element

Method used

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  • Semiconductor laser element
  • Semiconductor laser element
  • Semiconductor laser element

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0077] figure 1 is a view of the semiconductor laser element according to the first embodiment of the present invention. In this semiconductor laser element, an n-type GaAs buffer layer 102, an n-type Al 0.5 Ga 0.5 As first cladding layer 103, one MQW active layer 104, one p-type Al 0.5 Ga 0.5 As second cladding layer 105, and a p-type GaAs etch stop layer 106. A ridge p-type Al 0.5 Ga 0.5 An As third cladding layer 107 and a p-type GaAs protective layer 108 are disposed on the etch stop layer 106 . The ridge p-type Al 0.5 Ga 0.5 The As third cladding layer 107 and the p-type GaAs protective layer 108 constitute a ridge 114 extending along the direction of the resonant cavity. a p-type Al 0.7 Ga 0.3 As spacers 109 are provided on both sides of the ridge 114 in the width direction. an n-type Al 0.7 Ga 0.3 An As photoelectric confinement layer 110 , an n-type GaAs current confinement layer 111 and a p-type GaAs planarization layer 112 are stacked on the spacer lay...

no. 2 example

[0101] Figure 5 is a view showing a second embodiment of the semiconductor laser element of the present invention. This semiconductor laser element is different from the semiconductor laser element of the first embodiment only in terms of the carrier concentration of the substrate, the thickness of the second cladding layer, the main impurities contained in the second cladding layer, and the concentration of impurities contained in the etching stop layer. The main impurity, the dopant of the spacer layer, the layer thickness and carrier concentration, the carrier concentration of the photoelectric confinement layer and the layer thickness of the current confinement layer are different. The same parts as those of the semiconductor laser element of the first embodiment are denoted by the same reference numerals, and no detailed description thereof will be given.

[0102] In the semiconductor laser element of this embodiment, the concentration of carriers in the n-type GaAs sub...

no. 3 example

[0108] Figure 6 is a view showing a third embodiment of the semiconductor laser element of the present invention. In this semiconductor laser element, an n-type GaAs buffer layer 302 is sequentially stacked on an n-type GaAs substrate 301, and an n-type (Al 0.7 Ga 0.3 ) InP first cladding layer 303, a MQW active layer 304, a p-type (Al 0.7 Ga 0.3 ) InP second cladding layer 305 . On the p-type second cladding layer 305 is formed a p-type GaInP etching stopper layer 306 having a predetermined width at the center in the width direction. A ridge p-type (Al 0.7 Ga 0.3 ) InP third cladding layer 307 and a p-type GaAs protective layer 308 are disposed on the etch stop layer 306 . The etch stop layer 306, the third cladding layer 307 and the protective layer 308 form a ridge 314 extending along the direction of the resonant cavity. A p-type AlInP spacer layer 309 is provided on both sides in the width direction of the ridge 314 . An n-type AlInP photoelectric confinement la...

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PUM

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Abstract

There is provided a semiconductor laser element, which has a small capacitance outside a ridge portion and high response speed and is able to effect pulse oscillation with a satisfactory pulse waveform. On a GaAs substrate 101, there are provided an n-type buffer layer 102, an n-type first clad layer 103, an MQW active layer 104, a p-type second clad layer 105, a p-type etching stop layer 106 that has an energy bandgap smaller than that of this second clad layer 105, a p-type third clad layer 107 that constitutes a ridge portion and a p-type protective layer 108. On both sides in the widthwise direction of the ridge portion are laminated a p-type spacer layer 109, an n-type current light confining layer 110, an n-type current confining layer 111 and a p-type flattening layer 112. On these layers is laminated a p-type contact layer 113. A depletion layer spreads into the spacer layer 109 when a bias voltage is applied. Therefore, a capacitance between the spacer layer 109 and the current light confining layer 110 is reduced, and a response speed during the pulse oscillation of the semiconductor laser element becomes fast.

Description

technical field [0001] The present invention relates to a semiconductor laser element. Background technique [0002] Traditional semiconductor laser components such as Figure 10 shown (refer to Japanese Patent Laid-Open No. Hei 9-199790). The semiconductor laser element is an effective refractive index waveguide type semiconductor laser element. On the n-type GaAs substrate 501, there is an n-type GaAs buffer layer 502, an n-type AlGaAs first cladding layer 503, a quantum well active layer 504, and a p-type AlGaAs second cladding layer 505 , a p-type GaAs etch stop layer 506, a p-type AlGaAs third cladding layer 507 and a p-type GaAs capping layer 508. The p-type AlGaAs third cladding layer 507 and the p-type GaAs cap layer 508 form a ridge shape, thereby constituting the ridge portion 513 . An n-type AlGaAs photoelectric confinement layer (current light confining layer) 509, an n-type GaAs current confinement layer (current confining layer) 510 and a p-type GaAs flat la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/20H01S5/22H01S5/223H01S5/343
CPCH01S5/222H01S5/2004H01S5/2231H01S5/34
Inventor 松本晃广
Owner SHARP FUKUYAMA LASER CO LTD
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