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Sputtering device utilizing magnetic field to form metal film

A sputtering device and sputtering technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve problems such as low production efficiency

Inactive Publication Date: 2003-04-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Correspondingly, the LTS method is also characterized by low production efficiency

Method used

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  • Sputtering device utilizing magnetic field to form metal film
  • Sputtering device utilizing magnetic field to form metal film
  • Sputtering device utilizing magnetic field to form metal film

Examples

Experimental program
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Embodiment Construction

[0035] Preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0036] refer to image 3 , the sputtering device 3 according to the present invention comprises a sputtering chamber 30 in which a substrate 34 is placed in a specific area in front of the target 32 ​​. The sputtering device 3 also includes a vacuum pump for pumping out air from the sputtering chamber 30 to form a vacuum in the sputtering chamber 30 . The sputtering chamber 30 is also connected to a plasma power supply 36 that provides energy for generating the plasma. Specifically, a plasma power source 36 is connected to the target 32 ​​. The substrate 34 is connected to a bias power supply 38 which provides a bias. A gas, such as argon, introduced into the sputtering chamber 30 is converted into a plasma. Thereby, the generated plasma hits the target 32 ​​, thereby sputtering atoms from the target 32 ​​. The atoms sputtered from the front side...

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PUM

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Abstract

A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annule of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

Description

technical field [0001] The invention relates to a sputtering device. In particular, it relates to a sputtering device which forms a magnetic field in front of a target and simultaneously forms a metal layer on a substrate. Background technique [0002] Recently, since means for information processing such as computers have been more widely used, the design of semiconductor devices has been rapidly developed. In particular, this development has required semiconductor devices to operate at higher operating speeds and have greater memory capabilities. In order to meet these demands, a semiconductor device with increased density and reliability and faster response time is being developed. Accordingly, design requirements for metal layers used to form wiring patterns in semiconductor devices are becoming stricter. [0003] The metal layer is usually a metal sputtered from the target to the substrate, such as titanium, titanium nitride, aluminum and other metals. Research and ...

Claims

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Application Information

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IPC IPC(8): H01L21/203C23C14/35H01J37/34
CPCH01J37/3402C23C14/35C23C14/352
Inventor 朴荣奎严显镒申在光金圣九
Owner SAMSUNG ELECTRONICS CO LTD