Prepn of porous luminescent material

Abstract

The present invention is supersonic electrochemical etching process of preparing porous luminescent silicon material. The traditional porous silicon material preparing electrochemical processes, including DC current process and pulse current process, has some demerits resulting in porous silicon material with imperfect optical characteristics. The supersonic electrochemical etching process of the present invention has optimized etching condition, and can obtain porous silicon material with improved surface interface structure and optical characteristics.

Description

technical field [0001] The invention is a new method for preparing porous silicon material by electrochemical anode corrosion method. Background technique [0002] Porous silicon, that is, a porous silicon material, was originally used as a structural isolation layer in integrated circuits, because the holes in the silicon pillars in the porous silicon layer are depleted and have a large resistance. Porous silicon didn't attract much attention at the time. From the first reported discovery of porous silicon in the 1950s and the nearly 40 years thereafter, there have been less than 200 related articles. In 1990, British scientist L. T. Canham discovered the high-efficiency emission of visible light from porous silicon at room temperature, which opened up a new field for all-silicon-based optoelectronic integration, and soon caused a research boom in the scientific community. People have not only carried out theoretical and experimental studies on the basic characteristics o...

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Problems solved by technology

When the traditional DC etching method is used to etch porous silicon, the silicon-fluorine compound produced is easy to deposit at the bottom of the hole, and the H 2 Bubbles are adsorbed on the surface of the silicon column due to surface tension, which hinders the penetration of the etching solution into the bottom of the silicon hole, making the chemical reaction slow and difficult

On the other hand, the reaction deposits cause the resistance of the silicon wafer to increase and the reaction current density to decrease, which is not conducive to maintaining a certain reaction speed.

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