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Non-volatile memory and method for manufacturing the same

A non-volatile storage and non-volatile technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as charge trapping, component programming, and voltage reduction

Inactive Publication Date: 2003-10-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the voltage caused by the charge on the word line is less than the breakdown voltage of the diode, the charge may still be trapped in the trapping layer, causing the device to be programmed
Moreover, in this way, the input voltage will be reduced, which will affect the writing speed

Method used

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  • Non-volatile memory and method for manufacturing the same
  • Non-volatile memory and method for manufacturing the same
  • Non-volatile memory and method for manufacturing the same

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Embodiment Construction

[0025] In order to prevent various problems caused by the antenna effect (Antenna Effect) caused by plasma during the manufacture of non-volatile memory (Non-volatile Read Only Memory), the present invention provides a method for manufacturing non-volatile memory .

[0026] Figure 1A to Figure 1C It is a sectional view of the manufacturing process of a non-volatile memory according to a preferred embodiment of the present invention.

[0027] Please refer to Figure 1A , form a non-volatile memory unit 102 in a substrate 100, the non-volatile memory unit 102 includes a trapping layer (Trapping Layer) 104 and a word line (Word Line) 106 on it, wherein the trapping layer 104 is, for example, an oxide Silicon / silicon nitride / silicon oxide (Oxide-Nitride-Oxide, ONO for short) composite layer, and the non-volatile memory made of the capture layer 104 is called Nitride Read Only Memory (NROM for short). ). The word line 106 is, for example, a composite layer composed of a polysil...

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Abstract

The present invention is non-volatile memory and its manufacture. The structure of the non-volatile memory includes one character line formed on one substrate, one trap layer between the character line and the substrate, one contact window over the substrate and connected electrically to the character line, one earthing doped area in the substrate, and protective metal line connected electrically to the earthing doped area and to the character line via the contact window, with the protective metal line having resistance higher than that of the character line.

Description

technical field [0001] The present invention relates to a memory element and its manufacturing method, and in particular to a non-volatile memory (Non-volatile Memory, NVM) and its manufacturing method. Background technique [0002] In the known non-volatile memory (NVM) manufacturing process, it is often necessary to use plasma for various processes, and when the instantaneous charge in the plasma is unbalanced, the charge will move along the metal on the wafer, which is the so-called The antenna effect (Antenna Effect) will cause the charge to be injected into the trapping layer (Trapping Layer) of the non-volatile memory, resulting in a programming effect (Programming Effect), which will lead to the problem of too high threshold voltage (ThresholdVoltage). Generally, the distribution of the starting voltage is from 0.3V to 0.9V, and the difference is very large. [0003] Therefore, the current method to solve the programming problem caused by the antenna effect is to for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/10H10B20/00
Inventor 郭东政刘建宏潘锡树黄守伟
Owner MACRONIX INT CO LTD