Check patentability & draft patents in minutes with Patsnap Eureka AI!

Pinhole defect repair by resist blow

A pinhole and defect technology, applied in the field of semiconductor processing, can solve problems such as leakage and unsatisfactory methods of repairing pinhole defects

Inactive Publication Date: 2004-01-07
ADVANCED MICRO DEVICES INC
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These defects may cause problems in the finished device, such as leakage
Therefore, the method for repairing pinhole defects is not yet satisfactory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pinhole defect repair by resist blow
  • Pinhole defect repair by resist blow
  • Pinhole defect repair by resist blow

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] On the one hand, if Figure 1a As shown, the present invention provides a system 100 for heating photoresist 102 to repair pinhole defects. The system 100 heats the photoresist 102 in a conventional way, so that the photoresist 102 generates a limited photoresist flow to close pinhole defects. Cooling can be performed simultaneously to limit the extent to which the photoresist 102 is heated and the extent to which the photoresist 102 flows.

[0021] On the other hand, as Figure 1b The illustrated invention provides a system 110 for detecting pinhole defects when selectively heating the photoresist 102 to repair pinhole defects. The system 110 scans the photoresist 102 for pinhole defects and selectively applies heat to create limited photoresist flow where pinhole defects are found. The pinhole defect detection system 110 and the system 100 can be a part of a device or system, such as Figure 1b shown, or can be located in a separate device such as Figure 1c shown...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to one aspect of the present invention, pinhole defects in resist coatings are repaired by heating the resist briefly to induce the resist to flow and fill pinholes. The resist is brought to a temperature at or above that at which the resist flows for long enough to permit the resist to flow and fill pinhole defects, but not so long as to corrupt the resist pattern. The original resist pattern may be biased to allow for some flow during the pinhole repair process. The entire patterned resist may be heated at once, or it may be heated one portion at a time. The application of heat may optionally be limited to locations where pinhole defects are found. By means of the invention, very thin patterned resist coatings free from pinhole defects may be obtained.

Description

technical field [0001] The present invention relates generally to semiconductor processing, and more particularly to repairing pinhole defects in patterned photoresist coatings. Background technique [0002] In the semiconductor industry, there is a continuing trend towards higher device densities. To achieve such high densities, there have been and continue to be efforts to shrink the size of devices on semiconductor wafers. To achieve higher device densities, smaller and smaller feature sizes are required. These may include the width and clearance of interconnects, the clearance and diameter of contact holes, and the surface geometry of corners and edges of various features. [0003] High resolution photolithography is used to achieve small features with narrow gaps between adjacent features. In general, photolithography represents a method for pattern transfer between various media. Photolithography A technique used in the manufacture of integrated circuits in which s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01Q30/10G01Q60/00G01Q70/00G01Q80/00G01Q90/00G03F7/40H01L21/027H01L21/66
CPCG03F7/40B82Y15/00G03F7/00
Inventor M·K·坦普尔顿
Owner ADVANCED MICRO DEVICES INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More