Unlock instant, AI-driven research and patent intelligence for your innovation.

Fiber and narrow strip for manufacturing solar cell

A technology of solar cells, narrow strips, applied in the field of fibers or narrow strips

Inactive Publication Date: 2004-01-28
EI DU PONT DE NEMOURS & CO
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, shading losses account for about 9% of losses in solar cell structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fiber and narrow strip for manufacturing solar cell
  • Fiber and narrow strip for manufacturing solar cell
  • Fiber and narrow strip for manufacturing solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A smooth fiber-forming paste containing silver particles was prepared as follows. First soak 5.0g ELVAX in 30ml tetrachlorethylene (TCE) in a 100ml beaker  265 ethylene / vinyl acetate resin (DuPont, Wilmington, DE) for half an hour. The beaker surrounded by a circular band heating device was placed in a bell jar. An air-driven stirrer, located in the center of the bell, stirs the mixture in the beaker. The mixture was heated to 100°C until the polymer dissolved. To the solution was added 15.0 g silver powder (silver powder, normal size -2 micron D50 [-0.5 micron D10, -7 micron D90], available from E.I. du Pont de Nemours and Company, Wilmington, DE) and 0.4 g glass frit. Stir for about 4 hours. Once the mixture appeared smooth, a vacuum was applied to the bell jar and the mixture was allowed to thicken until a scalable viscosity was obtained. The mixture was then tested with a spatula to ensure that the fibers could be drawn from a smooth, dense paste. Once a smoo...

Embodiment 2

[0043] The silver fibers from Example 1 were adhered to a silicon wafer and burned in an IR oven at 900°C (set point). The fibers do not retain their original dimensions. The burned fibers measured 40 microns by 8 microns high.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention is directed to a process for the fabrication of electrodes on a silicon wafer utilizing fibers or ribbons comprising organic polymer and inorganic conductive material.

Description

technical field [0001] The present invention relates to fibers or narrow ribbons comprising organic polymers and inorganic materials. The invention also relates to a method of using such fibers or narrow tapes to manufacture structural features of solar cells. technical background [0002] A p-type based conventional solar cell structure has a negative electrode usually on the front or sun facing side of the cell and a positive electrode on the back. The solar cell has a carrier collection junction near its front surface. The front surface is in contact with mutually parallel fingers, each finger typically having a width of about 140 microns. The pointer is connected by two bus bars, and the bus bars are perpendicular to the pointer. Typically, a 5 inch square battery has about 55 hands spaced about 2.1 mm apart from each other. Harvesting stored current through the solar cell can be collected through metal contacts on the doped regions on the front surface and through s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04B05D3/02B05D5/12B22F1/107H01L31/0224H01L31/18
CPCB29L2031/731H01L31/022425B29C47/00Y02E10/547H01L31/068B22F1/0074Y02E10/50B29C47/0014H01B1/22B29C48/05B29C48/00B22F1/107H01L31/04H01L31/18
Inventor A·F·卡罗尔C·J·罗奇
Owner EI DU PONT DE NEMOURS & CO