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Silicon memory for permanent silicon/oxide/nitride/silicon/nitride/oxide

A memory and oxide technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of low storage performance of flash memory, and achieve the effect of increasing capacity, high capacity, and high operation rate

Inactive Publication Date: 2004-04-21
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, due to the shortcoming of low retention of flash memory, a silicon / oxide / nitride / oxide / silicon (SONOS) memory for increasing information capacity and improving process performance was published on page 93 of Volume 8, No. 3, 1987. Introduced by CHAN ETAL. in IEEE Electronic Equipment Letter

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  • Silicon memory for permanent silicon/oxide/nitride/silicon/nitride/oxide
  • Silicon memory for permanent silicon/oxide/nitride/silicon/nitride/oxide
  • Silicon memory for permanent silicon/oxide/nitride/silicon/nitride/oxide

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Embodiment Construction

[0036] The present invention will be fully described with reference to the accompanying drawings, in which preferred embodiments of the invention are shown.

[0037] image 3 is a perspective view of a silicon / oxide / nitride / silicon / nitride / oxide / silicon (SONSNOS) memory according to a first embodiment of the present invention.

[0038] refer to image 3 A gate 107 is placed on the substrate 101 including a source 103 and a drain 105, and a multi-layer ONSNO layer is interposed between the substrate 101 and the gate 107 to trap electrons. An electron channel is formed between the source and drain electrodes 103 and 105 . Here, the gate 107 can be made of a semiconductor such as silicon (Si) or metal.

[0039] The ONSNO layer includes first and second oxide layers 111a and 111b respectively on the substrate 101 and under the gate 107, and first and second oxide layers 111b on the first oxide layer 111a and under the second oxide layer 111b respectively. Dinitride layers 113a a...

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Abstract

A nonvolatile silicon / oxide / nitride / silicon / nitride / oxide / silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and under the second insulating layer, respectively, and a group IV semiconductor layer, silicon quantum dots, or metal quantum dots interposed between the first dielectric layer and the second dielectric layer. The provided SONSNOS structure memory device improves a programming rate and the capacity of the memory.

Description

technical field [0001] The present invention relates to nonvolatile memory, and more particularly, to silicon / oxide / nitride / silicon / nitride / oxide / silicon (SONSNOS) memory with improved capacity. Background technique [0002] figure 1 A cross-sectional view of a conventional flash erasable programmable read-only memory (EEPROM) is shown. Here, the flash EEPROM, as a nonvolatile memory, can retain data even when the power is turned off. [0003] refer to figure 1 , a gate 17 is placed on the substrate 11 including a source 13 and a drain 15, and a gate oxide 21, a floating gate 23 and an insulating layer 25 are sequentially stacked on the gate 17 and substrate 11. [0004] In general, a flash memory can be programmed using thermionic implants from a portion of the substrate 11 , more specifically, from the electron channel formed between the source 13 and the drain 15 . The thermionic implantation mechanism involves converting electrons delivering negative charges to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247G11C16/04H01L21/28H01L27/115H01L29/423H01L29/51H01L29/788H01L29/792
CPCB82Y10/00G11C16/0475H01L29/7885H01L29/7887H01L29/513H01L21/28273H01L29/7888H01L29/42332G11C2216/06H01L21/28194H01L21/28282H01L29/518H01L29/517H01L29/40114H01L29/40117H10B99/00
Inventor 蔡洙杜金柱亨金桢雨蔡熙顺柳元壹
Owner SAMSUNG ELECTRONICS CO LTD