Semiconductor device and producing method thereof

Abstract

In a semiconductor device including a plurality of element regions and an element isolation region based on STI (shallow trench isolation) which electrically isolates the element regions from each other, each of the element regions includes; a channel region; source/drain regions formed to sandwich the channel region in a horizontal direction; a gate insulation film which is formed on the channel region and in which an angle of a bird's beak is 1 degree or smaller, the bird's beak being formed from a side of the element isolation region on a surface opposite a surface facing the channel region in a horizontal direction substantially perpendicular to the direction in which the source/drain region sandwich the channel region; and a gate electrode layer formed on the gate insulation film.

Description

technical field [0001] The present invention relates to a semiconductor device having a field effect transistor including a gate insulating film and a method for manufacturing the same, and more particularly to a semiconductor device suitable for further miniaturization of the transistor size and a method for manufacturing the same. Background technique [0002] In a structure that can be used in a semiconductor device integrating field effect transistors provided with a gate insulating film, and in a structure in which regions where these transistors are provided are electrically isolated from each other (element isolation), for example, there is JP-A-9 - Construction described in bulletin No. 181166. This gazette describes a structure in which, instead of using selective oxidation, a trench is formed on a substrate and an oxide is buried in the trench for element isolation. [0003] [Patent Document 1] [0004] Japanese Patent Application Publication No. 9-181166 [000...

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Problems solved by technology

However, in this case, since the side walls of the formed trench also include the side surfaces of the gate insulating film, it must be taken into account not to adversely affect the gate insulating film.

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