Plate for forming metal wires and method of forming metal wires using same
A technology of metal wires and silicon substrates, which is applied to the field of forming metal wires and using the board to form metal wires, and can solve problems such as failure
Active Publication Date: 2004-08-11
KEY FOUNDRY CO LTD
View PDF0 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] However, in the conventional method of forming metal wires of a multilayer structure using a damascene process, some problems occur due to diffuse reflection, surface flatness, etc. (photolithography) process, caused by the lower copper wire
Therefore, there are many difficulties in the process of forming ultra-fine micro-sized patterns
In addition, during etching, failure may occur due to loss of low-k insulating film or pattern wrinkling
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0045] Some preferred examples of the present invention will now be described in detail with reference to the accompanying drawings.
[0046] figure 2 A cross-sectional view of a semiconductor device is shown for explaining a plate for forming metal wirings according to an embodiment of the present invention.
[0047] The plate 20 for forming metal wires includes: a circular plate 20a in which a plurality of injection holes 20c are formed and a side wall 20b of a given height is formed at its edge; engraved patterns for forming a plurality of grooves on the plate 20a 21; and an engraving pattern 22 for forming a plurality of through holes on the engraving pattern 21.
[0048] The plate forming the metal wire can be made of a metal with excellent wear resistance and high melting point (for example, Ti, Ta, W, etc.), a nitride of the metal or such as Al 2 o 3 And other ceramics are made of materials. The engraving pattern 21 for forming a plurality of grooves and the engrav...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
Disclosed is a sheet for forming metal wires and method of forming the metal wires using the same. A plate for forming the metal wires having an engraved pattern for forming a plurality of trenches and an engraved pattern for forming a plurality of via holes. An insulating film pattern in which the trenches and the via holes are shaped is obtained using the plate. Also, a metal is buried into the trenches and the via holes by means of a damascene process to form upper metal wires electrically connected to lower metal wires. In the present invention, photolithography and etch processes are not employed. For this reason, reduction in the yield and reliability due to defects occurring in the photolithography and etch processes is prevented. Furthermore, the process steps are reduced to reduce the production cost and to improve productivity.
Description
technical field [0001] The present invention relates to a plate for forming metal wires and a method for forming metal wires using the plate, and more particularly, to a plate for forming metal wires and a method for forming metal wires using the plate, wherein, by using A single process of forming a plate on which an engraved pattern in the shape of a metal wire to be formed forms an insulating film pattern of a multilayer structure, and in which grooves and vias formed in the insulating film pattern are also formed by means of a damascene process. The metal wire is formed in the hole. Background technique [0002] The following will refer to Figures 1A to Figure 1D A conventional method of forming metal wires in semiconductor devices will be described. [0003] Referring to FIG. 1A , a given process is performed to form a bottom low-k insulating film 102 on a silicon substrate 101 . Then, an anti-polishing layer 103 is formed on the bottom low-k insulating film 102 . N...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): B32B3/26H01L21/3205H01L21/48H01L21/60H01L21/768H05K3/46
CPCY10T428/12361H01L2924/0002H01L21/76807H01L21/76817H01L21/76801H01L21/76829Y10T428/249953H01L2924/00
Inventor 朴祥均
Owner KEY FOUNDRY CO LTD