The application relates to the technical field of
semiconductor integrated circuit manufacturing, and particularly discloses an OPC
processing method for solving the MRC limitation of
metal layer patterns, which comprises the following steps: S1, screening out
metal layer line ends with hole
layers as to-be-optimized line ends from a
metal layer
layout; S2, identifying 'L' type line ends from the to-be-optimized line ends, and the patterns opposite to the 'L' type line ends are 'I' type line ends; S3, screening out short side 'L' type line ends from the 'L' type line ends, and the length of the short side of the short side 'L' type line end is less than 0.5 times of a
design standard of a hole to a target; and S4, identifying adjacent sides of the short side, and generating line end marks according to the adjacent sides. The OPC
processing method for solving the MRC limitation of metal layer patterns can ensure that the 'I' type line ends obtain sufficient compensation by preferentially controlling and setting edge placement errors of the contours to the connected adjacent sides, and solves the problem of contour retreat of the 'I' type line ends.