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DMOS with zener diode for ESD protection

A technology for transistors and cathode regions, applied in diodes, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as increasing device cost and increasing manufacturing complexity

Inactive Publication Date: 2004-08-25
GEN SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] One problem with the device shown in the previously mentioned patent is that its construction requires an additional masking step, adding to the complexity of its manufacture and increasing the cost of the device

Method used

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  • DMOS with zener diode for ESD protection
  • DMOS with zener diode for ESD protection
  • DMOS with zener diode for ESD protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] figure 1 The equivalent circuit of a typical N-channel DMOS is shown in which a Zener diode is placed between the source and gate of the DMOS. The Zener diode breaks down when the gate-to-source voltage exceeds a certain voltage value.

[0018] figure 2 An example of an existing trench DMOS structure is shown. The structure comprises an n+ substrate 100 on which a lightly n-doped epitaxial layer 104 is grown. In the doped epitaxial layer 104 an oppositely conductive body region 116 is provided. An n-doped epitaxial layer 140 superimposed on most of the body region 116 is used as a source. A rectangular trench 124 is provided in the epitaxial layer, which opens at the upper surface of the structure and defines the perimeter of the transistor element. The gate oxide layer 130 is in-line with the sidewalls of the trench 124 . Trench 124 is filled with polysilicon, that is, polycrystalline silicon. The drain electrode is connected to the rear surface of the semicond...

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PUM

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Abstract

A trench DMOS transistor having overvoltage protection includes a substrate of a first conductivity type and a body region(116) of a second conductivity type formed over the substrate. At least one trench(124) extends through the body region and the substrate. An insulating layer lines the trench and overlies the body region. A conductive electrode is deposited in the trench so that it overlies the insulating layer. A source region of the first conductivity type is formed in the body region adjacent to the trench. An updoped polysilicon layer overlies a portion of the insulatin g layer. A plurality of cathode(145) regions of the first conductivity type are formed in the updoped polysilicon layer(160). At least one anode(148) region is in contact with adjacent ones of the plurality of cathode regions.

Description

technical field [0001] The present invention relates generally to MOSFET transistors, and more particularly to DMOS transistors having a trench structure. Background technique [0002] A DMOS (Double Diffused MOS) transistor is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that uses diffusion to form the transistor region. DMOS transistors are generally used as power transistors to provide high voltage circuits for power integrated circuit applications. DMOS transistors provide higher current per cell area when low forward voltage drop is required. [0003] A typical discrete DMOS circuit consists of two or more individual DMOS transistor elements fabricated in parallel. The individual DMOS transistor elements share a common drain contact (substrate), while their sources are shorted with metal and their gates are shorted with polysilicon. Thus, even though the discrete DMOS circuit is constructed from a matrix of smaller transistors, it behaves as i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L21/336H01L21/822H01L21/8234H01L27/06H01L29/49H01L29/78H01L29/866
CPCH01L29/7808H01L29/4916H01L29/7813H01L2924/0002H01L2924/00H01L23/62
Inventor 石甫渊苏根政
Owner GEN SEMICON