Etching liquid managing method and etching liquid managing device
A management method and a technology of a management device, which are applied in the field of etchant management and etchant management devices, and can solve problems such as changes in the composition of the etchant, unsolvable changes in the concentration of the etchant, and waste of the etchant
Inactive Publication Date: 2004-09-29
NAGASE & COMPANY +1
View PDF5 Cites 17 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, due to the removal of the substrate, mist during blowing, and evaporation, the composition of the etchant used repeatedly will change over time.
As a result, there is a problem that a sufficient etching effect cannot be obtained with the passage of time.
[0005] In addition, there is also a problem that not only must the etchant whose composition has changed be frequently replaced, but also the used etchant must be discarded, which is costly.
However, it still cannot solve the concentration change caused by the evaporation of etching solution
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0024] The embodiments of the present invention will be described in detail below with reference to the drawings. This embodiment is only an example of the present invention, and the present invention is not limited to this. In addition, in the description of the drawings, the same components are given the same reference numerals, and repeated descriptions are omitted.
[0025] figure 1 It is a schematic diagram showing the apparatus 100 of this embodiment. The device 100 is composed of an etching tank 101, a recovery line 103, a storage and recovery tank 104 for etching liquid, a titration and measurement mechanism 200, an arithmetic mechanism 110, a stock / replenishing liquid storage tank 105, and a pipe connecting these components. A spray nozzle 102 is provided in the etching groove 101 to perform an etching process corresponding to the etched metallic material 10. The recovery line 103 recovers the used etching solution from the etching tank 101.
[0026] In the etching groo...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Provided are a method and an apparatus for controlling an etching solution for use in metal type materials, which maintain the concentration of each component varying with the lapse of time at a substantially constant value. The method for controlling the concentration of each component in an etching solution for use in metal type materials(10) repeatedly, comprises the steps of: titrating the etching solution with a solution having a nature opposite to that of the etching solution, while measuring the electroconductivity of the etching solution; calculating the amount of a component deficient in the etching solution by using the measured value; and providing the etching solution with the amount of the deficient component as calculated above by using parent liquor of the component and / or a supplementary solution.
Description
Technical field [0001] The present invention relates to an etching solution management method and management device. The present invention particularly relates to an etching solution management method and management device for keeping the component concentration of an etching solution for metallic materials used repeatedly at a substantially constant level. Background technique [0002] In the past, so-called etching processing methods have been used, for example, for processing printed circuit boards, ITO films, lead holders, etc., and steel washing processing for polishing the surface of steel. Specifically, an etching solution is used to form a metal thin film pattern on a substrate of an array substrate constituting a flat display device of a liquid crystal display and an organic EL display, and on a substrate of a silicon wafer constituting a semiconductor element. [0003] Generally, the etching solution is composed of water and several volatile components. These components...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C23F1/00C09K13/00C23F1/08C23F1/16C23F1/32G02F1/13H01L21/306
CPCC09K13/00C23F1/16C23F1/32H01L21/30604
Inventor 上林清桥本和之菊川诚福地圭祐
Owner NAGASE & COMPANY