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Method for detecting metal pollution and corpuscle in processing device

A detection method, a technology for microparticles, used in measurement devices, material analysis using wave/particle radiation, preparation of samples for testing, etc.

Inactive Publication Date: 2004-10-27
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The main problem to be solved by the present invention is to provide a method for detecting metal pollution and microparticles in a process device, which can quickly and effectively detect the content of metal pollution and microparticles in a process device, so as to solve the problems faced by existing detection methods

Method used

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  • Method for detecting metal pollution and corpuscle in processing device
  • Method for detecting metal pollution and corpuscle in processing device
  • Method for detecting metal pollution and corpuscle in processing device

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Experimental program
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Embodiment Construction

[0046] Please refer to figure 1 , figure 1 It is a flow chart of the steps of the method for detecting metal pollution and microparticles in a process device by using a control chip.

[0047] Step 100: Provide a control sheet such as a blank chip or a control sheet without graphics.

[0048] Step 120: Place the control piece in a process device to be tested, such as one of the machine equipment used in the processes of thin film deposition, dry etching, ion implantation and lithography, and compare the control with the process device The wafer is processed by one of the processes of thin film deposition, dry etching, ion implantation and lithography.

[0049] Step 140: Form a silicon material layer on the control chip (for example, the silicon material layer is polysilicon, amorphous silicon and epitaxial silicon), and the formation method of the silicon material layer can be, for example, chemical vapor deposition. When the silicon material layer is formed on the control ch...

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PUM

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Abstract

The method includes following steps: providing a control piece; putting the piece into processing device to be tested; carrying out processing for the control piece by the processing device; then silicone material layer is formed on the control piece; measuring number of corpuscle and defects formed on silicone material layer of the control piece so as to obtain degree of metal pollution and corpuscle in processing device.

Description

technical field [0001] The invention relates to a method for detecting metal pollution and microparticles, in particular to a method for detecting metal pollution and microparticles in a semiconductor process device. Background technique [0002] The so-called integrated circuit is an electronic product that reduces and manufactures various components and circuits required for a specific circuit in an area of ​​only 2 cm or less. Because integrated circuits are mostly composed of tens of thousands of solid-state electronic components whose size can only be viewed with a microscope, they can also be called microelectronic components. [0003] The current technology development trend of semiconductor integrated circuits is to evolve towards smaller line widths, so the requirements for the cleanliness of process equipment are becoming more and more stringent. In semiconductor equipment, major process equipment such as thin film deposition, dry etching, ion implantation, and li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28G01N23/223H01L21/66
Inventor 俞文光黄良田
Owner MACRONIX INT CO LTD