Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for realizing stress optical waveguide polarization insensitivity of silicon group silicon dioxide with symmetric structure

A symmetrical structure, silicon dioxide technology, applied in the direction of optical waveguide and light guide, can solve the problem of polarization insensitivity of waveguide and related devices

Inactive Publication Date: 2005-01-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using PECVD to grow a high-refractive-index SiON compensation layer that can adjust the birefringence coefficient of the waveguide, half of the compensation layer is etched symmetrically in the center of the waveguide to achieve polarization insensitivity of the waveguide and related devices has not been reported internationally.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for realizing stress optical waveguide polarization insensitivity of silicon group silicon dioxide with symmetric structure
  • Method for realizing stress optical waveguide polarization insensitivity of silicon group silicon dioxide with symmetric structure
  • Method for realizing stress optical waveguide polarization insensitivity of silicon group silicon dioxide with symmetric structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] see figure 2 , diagram 2-1 A lower cladding layer 11 of silicon dioxide with a thickness of not less than 15 μm is formed on the silicon substrate 10 by thermal oxidation, flame hydrolysis (FHD) or plasma enhanced chemical vapor deposition (PECVD) to limit light leakage; Figure 2-2 The high refractive index SiON compensation layer 12 with adjustable waveguide birefringence is grown by PECVD method. The thickness and refractive index of the SiON compensation layer should be adjusted according to the birefringence of the actual silicon-based silicon dioxide stress optical waveguide. The refractive index can be adjusted by Control the content of N to achieve; Figure 2-3 Half of the SiON compensation layer 12 is symmetrically etched away by reactive ion etching (RCE) at the waveguide symmetry center; Figure 2-4 The core layer 13 with a thickness of 6 μm is grown by FHD method or PECVD method, and the refractive index is determined according to the refractive index di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This is a method for carrying out that the stress optical waveguide polarization of silicon-based silica dioxide with symmetrical structure isn't sensitive, including that: (1) forming silica-dioxide lower cladding in the silicon substrate by methods of thermal oxidation, flame hydrolytic decomposition or plasma enhancing chemical vapour deposition, (2) adjusting high refractive index SiON compensation layer of adjustable waveguide birefraction factor by method of plasma enhancing chemical vapour deposition, (3) symmetrical etching half of it by method for reactive ion etching in the waveguide center, (4) accreting core layer by method for flame hydrolytic decomposition or plasma enhancing chemical vapour deposition, (5) proceeding burnishing, (6) etching core layer by method for reactive ion etching to form optical waveguide layer of strip-shaped symmetrical structure, (7) accreting upper cladding by method for flame hydrolytic decomposition or plasma enhancing chemical vapour deposition.

Description

technical field [0001] The present invention relates to silicon-based silicon dioxide stress optical waveguide devices with a symmetrical structure, used to realize the polarization insensitivity of this type of waveguide, especially silicon-based silicon dioxide arrayed waveguide grating (AWG) and Mach-Zehnder interference (MZI) type devices are not polarization sensitive. Background technique [0002] Silicon-based silica optical waveguide is an optical waveguide formed by depositing silicon dioxide on a silicon substrate and etching it. Because the thermal expansion coefficients of silicon dioxide and silicon substrate are inconsistent, the prepared waveguide has stress asymmetry. The waveguide exhibits large stress birefringence with a birefringence index of about 10 -4 order of magnitude, and general devices are required to be insensitive to polarization, and the birefringence index of the entire waveguide needs to be reduced to 10 -5 Therefore, realizing the polariza...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B6/13
Inventor 安俊明李健郜定山夏君磊李建光王红杰胡雄伟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI