Method for evaluating sensitivity of photoresist, method for preparation of photoresist
An evaluation method and a manufacturing method technology, which can be used in microlithography exposure equipment, photolithography process of patterned surface, semiconductor/solid-state device manufacturing, etc., and can solve problems such as focus variation and exposure difficulty.
Inactive Publication Date: 2005-02-02
KK TOSHIBA
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Problems solved by technology
However, in the case of the evaluation method of the photoresist sensitivity based on the size of the copied pattern, as a fluctuation factor, not only the exposure amount of the exposure device changes, but also the focus changes.
Therefore, it is impossible to separate and determine the effects of changes in photoresist sensitivity and changes in focus based on the measurement results obtained by measuring the length of the replicated pattern.
In addition, in the case of the evaluation method of photoresist sensitivity based on the film removal sensitivity, since the thickness of the remaining photoresist film near the film removal sensitivity changes rapidly, it is necessary to accurately calculate the thickness of the remaining photoresist film Corresponding exposure is difficult
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[0045] Embodiments of the present invention will be described below with reference to the drawings. In the description of the drawings below, the same or similar reference numerals are given to those same or similar parts. However, it should be noted that the drawings are schematic diagrams, and the relationship between thickness and size, the ratio of the thickness of each layer, etc., are different from the actual relationship and ratio. In addition, it is a matter of course that the relationship or the ratio of the dimensions of each other also includes parts that are different between the drawings.
[0046] The exposure apparatus used in the description of the embodiment of the present invention is, for example, figure 1 In the reduction projection exposure apparatus (stepper type) as shown, the reduction ratio is set to 1 / 4. As the light source 2, a KrF excimer laser with a wavelength λ of 248 nm is used, and the illumination optical system 3 includes a fly-eye lens and...
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Provided is an evaluation method of resist sensitivity with high accuracy. The method includes steps of: exposing the objective resist film to be inspected to form a monitor mark for exposure light quantity with the light quantity for the inspection by using an exposure apparatus; measuring the characteristic quantity for the inspection varying depending on the exposure light quantity from the transferred image for the inspection of the monitor mark for the exposure light quantity which is transferred onto the objective resist film; and calculating the resist sensitivity for the inspection of the objective resist film from the characteristic quantity for the inspection by using sensitivity correction data.
Description
technical field [0001] The present invention relates to a method for evaluating the sensitivity of a photoresist used in a photolithography process for manufacturing a semiconductor device, and to a method for manufacturing a photoresist. Background technique [0002] In the photolithography process in the manufacture of semiconductor devices such as semiconductor integrated circuits, the mask on which the circuit pattern has been formed is exposed with an exposure device, and the circuit pattern is copied to the photoresist film that has been applied to the semiconductor substrate. . With the increase in performance and integration of semiconductor devices, miniaturization of reproducible circuit patterns is demanded for pattern formation in which circuit patterns drawn on photomasks are copied onto semiconductor substrates. The imaging performance of the reduction projection exposure device can be evaluated by the optical imaging theory described by the Rayleigh formula. ...
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IPC IPC(8): G03F7/26G03F7/00G03F7/039G03F7/20H01L21/027H01L21/47
CPCG03F7/70608G03F7/70683H01L22/12
Inventor 盐原英志早崎圭藤泽忠仁伊藤信一
Owner KK TOSHIBA