Photoelectric device, its making method and electronic apparatus

Abstract

Aspects of the invention provide an electro-optical device that can include data lines that are a built-in light shielding film, scanning lines, TFTs having a semiconductor layer to which scanning signals are supplied by the scanning lines, pixel electrodes to which image signals are supplied by the data lines through the TFTs, storage capacitors arranged below the data lines, and an insulating film covering the storage capacitors. The data lines can be formed to avoid stepped portions on the surface of the insulating film caused by the height of the storage capacitors. Thus, it can be possible to improve the light shielding performance of the thin film transistors with respect to the semiconductor layer, to reduce or prevent the generation of light leakage current, and to display high-quality images without flicker.

Description

technical field [0001] The present invention belongs to electro-optic devices such as liquid crystal devices driven by active matrix, electrophoretic devices such as electronic paper, EL (Electroluminescent) display devices, devices having electron emission elements (field emission displays and surface conduction electron emission displays), and the like. Technical field of manufacturing methods. In addition, the present invention belongs to the technical field of electronic equipment including such an electro-optical device. Background technique [0002] In an electro-optic device of a TFT active matrix driving type, when incident light is irradiated on the channel region of a pixel switching TFT provided in each pixel, a light leakage current occurs due to excitation of light and the characteristics of the TFT change. In particular, in the case of an electro-optic device for a light valve of a projector, since the intensity of incident light is high, it is important to sh...

AI Technical Summary

Problems solved by technology

In particular, in the form of the above-mentioned protrusions and recesses, the end of the built-in light-shielding film is low and the portion other than the end (hereinafter referred to as "non-end") is high (in other words, there are raised parts and In the case of the edge portion), there is a greater possibility that the light reflected from the end portion and the boundary between the end portion and the non-end portion will enter the TFT

In this way, generally, since the TFTs are arranged in a matrix on the substrate in a plan view, and the built-in light-shielding film is arranged to define the opening area as described above, if the light is reflected by the aforementioned parts of the built-in light-shielding film, then Although the light is not incident on the TFT located directly below this part, the possibility of the light incident on the TFT located near it, or the TFT located near it is increased.

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