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Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof

A technology of electrical properties and in-situ stress, applied in measuring devices, measuring electrical variables, measuring electricity, etc., can solve problems such as difficult thin films, and achieve the effect of convenient operation and simple structure

Inactive Publication Date: 2005-03-16
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a device and measurement method for providing in-situ stress in the measurement of film electrical properties with simple structure and convenient operation. the impact of the puzzle

Method used

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  • Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof
  • Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof
  • Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof

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Embodiment Construction

[0033] A device for providing external in-situ stress in the measurement of electrical properties of thin films, comprising a spiral micrometer 1, a support 2 and a metal knife edge 3, the support 2 is a rectangular frame with an opening in the middle of one long side of the rectangular frame. The spiral micrometer 1 is vertically installed on the support 2, and is located on one side of the opening, and the other side of the opening is provided with a holder 4 for horizontally fixing the film together with the substrate; the film grows or is coated on the substrate. On the bottom, the metal knife edge 3 is horizontally fixed on the movable rod of the screw micrometer 1.

[0034] In the present invention, the distance between the clamping end and the metal knife edge should be smaller than the length of the film together with the substrate, and the film is located at the opening during measurement. The bracket can also adopt other forms, which can be a circular ring with an op...

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Abstract

This invention discloses an apparatus and its measurement method to provide additional home position mechanical stress in the measurement of thin film electrical property, which comprises micrometer screw gage, rack and metal knife edge, wherein, there is located with an opening in the rack and the micrometer screw gage is fixed on the rack and is located on one side of the edge; the other edge side of the opening is located with a clamper to fix the film and underlay; the metal edge is fixed on the movable bar of the micrometer screw gage. When in measurement, It fixes one end of the film and underlay on the clamper of the apparatus and exposes the other end of the electrode on the metal edge and exerts different expansion and pressing stress on the thin film through adjusting the screw nut of the micrometer screw gage. This invention can be widely used in the study of impact of different thin film on electric property.

Description

1. Technical field [0001] The invention relates to a device and a method for providing in-situ mechanical stress for the measurement of electrical properties of a thin film in a physical experiment and research on the stress effect of a thin film. Specifically, it relates to an in-situ measurement of a thin film under the condition of mechanical tensile and compressive stress. A device with electrical properties and a method of using the same. 2. Background technology [0002] Electrical properties are important parameters of thin film physical properties, including dielectric, ferroelectricity, conductance, capacitance-voltage curve, etc. Different materials have different emphases. In the film preparation process, factors such as substrate mismatch, heat treatment, and integrated packaging of thin film devices will introduce MPa-level stress into the film. This stress has a great impact on the performance of the film in all aspects, and even affects the device. reliabilit...

Claims

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Application Information

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IPC IPC(8): G01R15/00G01R31/00
Inventor 朱劲松吕笑梅杨震吴秀梅
Owner NANJING UNIV
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