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Manufacturing process of integrated circuits in flip-chip technology

A technology of integrated circuit and manufacturing process, which is applied in the direction of circuit, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as complexity, increased cost, and long integrated circuit manufacturing process

Inactive Publication Date: 2005-03-16
SILENA INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, this technology has a number of important disadvantages, the most important of which are the need to place additional passivation layers, conductive layers; preparation of masking layers and additional operations to remove superfluous layers at the end of the electroplating process
[0010] All these operations make the overall manufacturing process of the integrated circuit longer and more complex, also increasing its cost

Method used

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  • Manufacturing process of integrated circuits in flip-chip technology
  • Manufacturing process of integrated circuits in flip-chip technology
  • Manufacturing process of integrated circuits in flip-chip technology

Examples

Experimental program
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Embodiment Construction

[0027] Figures 1A to 1D illustrate one of the prior art methods currently used in the manufacture of integrated circuits by means of electroplating of contact elements (bumps) in flip-chip technology.

[0028] Especially on the silicon layer 2 comprising active devices, a plurality of pads 3 are formed for external connection of such devices.

[0029] The conductive layer 8 is provided on the entire flip chip. The layer 8 corresponding to the uncovered portion 7 is in electrical contact with the area of ​​the pad 5 .

[0030] Subsequently, a masking layer 9 is obtained to define an area 10 in which contact elements 11 (bumps) are to be arranged.

[0031] The conductive layer 8 serves as cathode in a subsequent electroplating stage of the contact element 11 .

[0032] Finally, the masking layer 9 and the underlying portion of the conductive layer 8 not touched by the electroplating process are removed by known techniques.

[0033] Figure 1D The final product of the method ...

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Abstract

A process for manufacturing integrated circuits in flip-chip technology having contact elements (31) realised on predetermined contact areas (23), comprises the steps of readying electrical connections (30) in such a way as mutually to connect all the contact areas (23) of said integrated circuit (21), galvanically depositing a contact element (31) in correspondence with each of said contact areas (23) and interrupting said electrical connections (30) between the contact areas (23).

Description

technical field [0001] The present invention relates to a process for manufacturing integrated circuits in flip-chip technology. Background technique [0002] Flip-chip technology is used to fabricate contact elements ("bumps"), usually made of a tin / lead alloy or another conductive metallic material, on connection structures (pads) with specific functions to create contact elements ("bumps") suitable for connecting silicon devices. A bump of solder between each pad and the substrate that houses them. [0003] In flip-chip technology, the silicon layer is mounted face-down, ie the substrate containing it with the active face facing down, with direct electrical contact. In this way, physical connections (usually metal lines) between the chip and external connections are no longer required, making the whole structure more economical and less susceptible to breakage and / or failure. [0004] Bumps can currently be created in different ways, from applying a conductive paste (ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/288H01L21/60H01L21/768
CPCH01L2924/01015H01L2924/01023H01L2924/01082H01L2924/01047H01L21/76892H01L2924/01079H01L21/2885H01L2924/14H01L2924/01033H01L2924/01006H01L2224/13099H01L2924/01078H01L2924/01057H01L21/76894H01L2224/1147H01L24/11H01L2924/014H01L2924/01013H01L2924/12042H01L2224/05001H01L2224/05569H01L2224/05024H01L2224/05008H01L2224/05022H01L2224/05572H01L2224/06135H01L24/05H01L2924/00
Inventor 多梅尼克·洛韦尔德朱塞佩·桑塞斯
Owner SILENA INT