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Method for catalytic synthetic growth InN nano point using In metal nano point

A technology of metal nano and nano dots, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems that the research of InN nano dots or quantum dot materials has not been carried out

Inactive Publication Date: 2005-03-23
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, InN materials have only just begun, and research on InN nano-dots or quantum dot materials has hardly been carried out.

Method used

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  • Method for catalytic synthetic growth InN nano point using In metal nano point
  • Method for catalytic synthetic growth InN nano point using In metal nano point
  • Method for catalytic synthetic growth InN nano point using In metal nano point

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Experimental program
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Embodiment Construction

[0017] The invention utilizes a MOCVD (metal organic chemical vapor phase epitaxy) epitaxial growth system, adopts a metal In nano-dot catalytic synthesis technology to grow InN nano-dots / quantum dot materials, and obtains InN nano-dots.

[0018] Specifically include the following steps:

[0019] 1. Surface cleaning and treatment of sapphire (0001) substrate. Clean the blue with trichlorethylene, acetone, and ethanol, respectively

[0020] Gem (0001) substrate, with H 2 SO 4 : HNO 3 (1:1) it was boiled at 200°C with H 3 PO 4 :H 2 SO 4 (1:3) etched it for 20 minutes. Then, rinse with deionized water and dry the surface with an infrared lamp.

[0021] 2. Heat treatment and nitriding of the sapphire (0001) substrate after it is placed in the growth chamber. The cleaned substrate

[0022] Put it into the growth chamber, first treat it in a hydrogen atmosphere at 900°C for 10 minutes, and then carry out nitriding treatment on the substrate in an ammonia atmosphere for 30...

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Abstract

The invention relates to the method of catalyzing and synthesizing the InN nanometer spot with the In metallic nanometer spot. By using the MOCVD method to catalyze and synthesize the InN nanometer spot material on the sapphire (0001) substrate, put the sapphire (0001) in the growth cabinet, form the metallic nanometer spots on the surface of the substrate with the MOCVD growth technology, control the temperature of the growth cabinet between 330deg.C and 400deg.C, input the metallic organic source of the trimethyl indium for between 5 minutes and 15 minutes and deposite a coat of In metallic nanometer spots on the surface of the substrate. Then choose metallic nanometer spots as the catalyzer and the nucleating center; input the metallic organic source of the indium trimethyl during forming the in metallic nanometer spots and synthesize the InN nanometer spot material.

Description

1. Technical field [0001] The invention relates to a novel method for catalyzing, synthesizing and growing InN nano-dot materials with In metal nano-dots, in particular utilizing MOCVD (metal organic chemical vapor phase epitaxy) technology to catalyze, synthesize and grow InN nano-dot materials. 2. Background technology [0002] Nanodots, also known as quantum dots, are three-dimensional clusters composed of a limited number of atoms with a size on the order of nanometers. The physical behavior (such as optical and electrical properties) of this 0-dimensional system is similar to that of atoms, so it is called "artificial atom". The energy state of electrons in it presents a discrete energy level structure similar to atoms. Since electrons (or holes) are bound in a relatively small area, the Coulomb interaction between electrons (or holes) is extremely significant, and filling an electron (or hole) must overcome the existing electrons in the quantum dot. (or hole) repulsio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34H01L21/205
Inventor 谢自力张荣修向前毕朝霞刘斌于英仪俞慧强郑有炓顾书林沈波江若琏施毅韩平朱顺明胡立群
Owner NANJING UNIV