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Method for realizing double port synchronous memory device and related apparatus thereof

A storage device and synchronous storage technology, applied in the fields of instruments, electrical digital data processing, etc., can solve the problems of high manufacturing time and cost, large layout area of ​​dual-port memory, complex circuit structure, etc.

Active Publication Date: 2005-06-01
VIA TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Although the above-mentioned known dual-port memory can indeed realize the function of a dual-port synchronous storage device, two access ports and corresponding access control transistors will be set for each storage unit in the dual-port memory, which also makes the dual-port memory The occupied layout area is relatively large, the circuit structure is relatively complicated, and the time and cost of design and manufacturing are relatively high, which is not conducive to the popularization of dual-port synchronous storage devices

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  • Method for realizing double port synchronous memory device and related apparatus thereof
  • Method for realizing double port synchronous memory device and related apparatus thereof
  • Method for realizing double port synchronous memory device and related apparatus thereof

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Embodiment Construction

[0032] Please refer to figure 1 . figure 1It is a schematic diagram of a typical dual-port synchronous storage device 10; the dual-port synchronous storage device 10 can be a static random access storage device, which can receive clock pulse CK, signals wr, rd, WAD, RAD and MDI from the outside, and output signals MDO. Wherein, the clock pulse CK is used to trigger the operation sequence of the dual-port synchronous memory device 10 . The signals wr and rd are write-in and read-enable signals respectively. When the levels of these two signals change from low level to high level, it means that data is to be written into the dual-port synchronous memory device 10 respectively. and read. In other words, when the signal wr or rd is enabled to a high level, it is equivalent to sending a read or write command to the dual-port synchronous memory device 10 . When the signal wr is enabled and requires data to be written into the dual-port synchronous storage device 10, an address i...

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Abstract

The present invention provides method and device for double-port synchronous storing with single-port memory. The double-port synchronous memory triggered with the clock pulse can receive read and write instruction synchronously in the same period of clock pulse for simultaneous data read / write; and contrarily, the single-port memory can read or write singly in the same period. The present invention makes the single-port memory first complete one instruction and then execute the other instruction for read and write within one period to realize the double-port synchronous memory function in relatively low cost.

Description

technical field [0001] The invention relates to a method and a related device for realizing a multi-port synchronous storage device, in particular to a method and a related device capable of realizing a multi-port synchronous storage device with a single-port memory with low cost and small layout area. Background technique [0002] In the modern information society, all kinds of data, documents, data and audio-visual information can be quickly processed, disseminated, managed and stored in the form of electronic signals (especially digital electronic signals), and various Electronic signals and electronic circuits for managing electronic data have become the focus of research and development by modern information manufacturers. Among them, a multi-port synchronous storage device capable of synchronously reading / writing data has wide applications. Under the trigger of the clock pulse, the multi-port synchronous storage device can synchronously receive the instruction of data...

Claims

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Application Information

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IPC IPC(8): G06F13/16
Inventor 陈圣中徐荣灿
Owner VIA TECH INC