Apparatus for inner surface modification by plasma source ion implantation

A technology of plasma source and ion implantation, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems that cannot be used to treat the inner surface of pipe fittings, etc., and achieve a modified inner surface of tubular workpieces Uniformity, improve corrosion resistance and wear resistance, and improve efficiency
CN1635177AInactive Publication Date: 2005-07-06INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2005-07-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a device for inner surface modification by injecting plasma ion source, wherein: setting a tubular work-piece into a processing chamber, laying a columnar electrode and a tubular electrode allowing plasma diffusion in the tubular work-piece from inside to out side coaxially_ contacting the two electrodes with the radio frequency power supply, connecting a negative high tension supply between the tubular electrode and the tubular work-piece, also including a driving device capable of making relative rotation between tubular work-piece and tubular electrode; the tubular electrode is made up of electrode wires on the outer surface of tubular support, the electrode wires are in circumferential uniform distribution or screw-type distribution; the columnar electrode is a hollow tube with magnetic-irons in it; the tubular electrode is an interconnected hollow metal tube. the magnetic-irons are ring, and axially uniformly distributed with homopolarity opposition. The invention intensifies the sputtering of plasma to center electrode material by setting magnetic-irons in the tubular electrode, and improves the processing efficiency of tubular work-piece inner surface.
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Description

technical field

[0001] The invention relates to the ion implantation technology using a plasma source, in particular to a device for modifying the inner surface of the plasma source ion implantation. Background technique

[0002] At present, plasma source implantation (PSII) is a new material surface ion implantation technology, such as in J.Appl.Phys. Such a plasma source ion implantation technique is described in "Plasma sourceion-implantation technique for surface modification of materials" by J.L. Radtke, R.A. Dodd, Frank J. Worzala, and Ngoc C. Tran. But at this time, directly injecting the inner surface of the tubular workpiece with PSII technology cannot be used to treat the inner surface of the pipe with a diameter-to-length ratio of less than 0.6. In order to solve this problem, the applicant proposed a method for modifying the inner surface of a tubular workpiece based on PSII technology in the Chinese invention patent application (publication number: 1382829) pub...

Claims

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