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Magnetic recording medium , magnetic memory and method of producing magnetic recording medium

A magnetic recording medium and magnetic layer technology, applied in the direction of recording information storage, magnetic recording, information storage, etc., can solve the problems such as difficult to improve the recording magnetic field, rewriting performance of recording characteristics, and deterioration of nonlinear transition offset

Inactive Publication Date: 2005-08-10
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Also, when the exchange coupling energy acting between the two magnetic layers is very large, thermal stability improves, but recording characteristics such as rewriting performance and Non-Linear Transition Shift (NLTS) deteriorate
Although there is a method of increasing the recording magnetic field to suppress deterioration of the recording characteristics, it is difficult to increase the recording magnetic field as described above

Method used

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  • Magnetic recording medium , magnetic memory and method of producing magnetic recording medium
  • Magnetic recording medium , magnetic memory and method of producing magnetic recording medium
  • Magnetic recording medium , magnetic memory and method of producing magnetic recording medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment I-V and comparative example C1-C5

[0077] Disks of Examples I-V and Comparative Examples C1-C5 were prepared with the following stacked structures: textured textured glass substrate, 25 nm thick Cr 50 Ti 50 First seed layer, 10nm thick Al 50 Ru 50 Second seed layer, 3nm thick first underlayer, 3nm thick second underlayer, 2nm thick Co 90 Cr 10 First magnetic layer, 0.8nm thick Ru non-magnetic coupling layer, 16nm thick Co 60 Cr 18 Pt 11 B 8 Cu 3 Second magnetic layer, 5.5nm thick DLC protective layer and 1.5nm thick AM3001 lubricating layer.

[0078] Except for the AM3001 lubricating layer, each layer of the stack structure was formed by a DC magnetron sputtering device. Formation of Cr on textured glass substrates 50 Ti 50 Before the first seed layer, the inside of the DC magnetron sputtering device is evacuated to less than or equal to 4×10 -5 Pa, and the textured glass substrate was heated to 180°C. The pressure inside the DC magnetron was set at 0.67 Pa except when the DLC protective layer was ...

Embodiment I

[0084] Embodiment IV will Cr 92.5 W 7.5 For the second bottom layer 15, to replace the Cr used in embodiment 1 75 Mo 25 . When having Cr(N) first bottom layer 14 and Cr 92.5 W 7.5 Embodiment IV of the second bottom layer 15 and the first bottom layer with Cr and Cr 92.5 W 7.5 When comparing the comparative example C4 of the second bottom layer, the coercive force square ratio of the embodiment IV is improved by 0.09 compared with the coercive force square ratio of the comparative example C4, and the resolution of the embodiment IV is comparable to that of the comparative example C4. Ratio increased by 2.1%.

[0085] Example V will Cr 95 W 5 For the first bottom layer 14, Cr(N) in Example I is not used. When having Cr 95 W 5 1st bottom layer 14 and Cr 75 Mo 25 Embodiment V of the second bottom layer 15 is the same as having Cr 95 W 5 First bottom layer and Cr 75 Mo 25 When compared with the comparative example C5 of the second bottom layer, the coercive force ...

Embodiment VI and comparative example C6

[0092] Below, will refer to Figures 3 to 9 The disk characteristics of Example VI are described. In Example VI, the amount of nitrogen gas added to the Ar gas atmosphere when the first underlayer 14 was formed was varied from 0 to 0.50 vol% in increments of 0.05 vol%. In addition, the formation of Cr in an Ar gas atmosphere without nitrogen addition 75 Mo 25 2nd bottom floor 15.

[0093] In Table 1, Comparative Example C6 corresponds to the case where the amount of nitrogen gas added to the Ar gas atmosphere was 0, that is, no nitrogen gas was added when forming the first underlayer. exist Figures 3 to 9 In each feature shown in , the eigenvalues ​​are interpolated from the eigenvalues ​​obtained in 0.05vol% increments.

[0094] The magnetic disks of Example VI and Comparative Example C6 are all made into the following stacked structure, and the stacked structure is composed as follows: textured textured glass substrate, 25nm thick Cr 50 Ti 50 First seed layer, 10nm t...

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Abstract

A method of producing a magnetic recording medium includes forming a underlayer on a base, and successively forming, on the underlayer, a first magnetic layer, a nonmagnetic coupling layer and a second magnetic layer. The first and second magnetic layers are exchange-coupled via the nonmagnetic coupling layer and have antiparallel magnetizations in a state where no external magnetic field is applied on the magnetic recording medium. The underlayer is made of Cr or a Cr alloy having a bcc crystal structure within an atmosphere including nitrogen gas.

Description

technical field [0001] The present invention generally relates to magnetic recording media suitable for high-density recording, magnetic storage devices using such magnetic recording media, and methods of manufacturing such magnetic recording media, and more particularly to magnetic recording media having two magnetic layers formed by antiferromagnetic exchange coupling A magnetic recording medium of a recording layer, a magnetic storage device using such a magnetic recording medium, and a method of manufacturing such a magnetic recording medium. Background technique [0002] Recently, the recording density of magnetic recording media has been significantly increased, even at a rate of 100% per year. However, in widely adopted longitudinal (or in-plane) recording systems, the limit of longitudinal recording density is expected to be 100Gb / in 2 up to 200Gb / in 2 The order of magnitude, because the medium noise will increase in the high-density recording area, and the output ...

Claims

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Application Information

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IPC IPC(8): G11B5/738G11B5/65G11B5/66G11B5/84G11B5/851
CPCG11B5/8404G11B5/66G11B5/725H01F10/002H01F10/12Y10S428/90
Inventor 村尾玲子铃木政也
Owner FUJITSU LTD
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