Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoelectric cell

A photovoltaic cell and electrode technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as hole and electron recombination, carrier loss, etc.

Inactive Publication Date: 2005-09-07
UNIVERSITY OF HULL
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Photovoltaic elements made of composites of organic and inorganic materials have several problems: Since holes and electrons pass through the same material in order to reach the electrodes, recombination of holes and electrons occurs
Carrier loss occurs due to charge trapping at the dead ends of the nanocrystal network

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric cell
  • Photoelectric cell
  • Photoelectric cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] refer to figure 1 , the photovoltaic cell embodying the present invention comprises a glass substrate 1, a first transparent indium tin oxide (ITO) electrode 2 and a second transparent indium tin oxide (ITO) electrode 3, the second electrode 3 is away from the first electrode 2 and basically parallel to it. A row of semiconducting nanowires 4 extends between the electrodes 2,3. For ease of explanation, denoted in figure 1 The nanowire 4 in is not sufficiently extended between the electrodes 2,3. Each nanowire 4 is surrounded by a polymer tube 5 . Each polymer tube 5 extends substantially between the electrodes 2,3. For ease of explanation, denoted in figure 1 The tube 5 in is not sufficiently extended between the electrodes 2,3.

[0031] The nanowires 4 are made of cadmium sulfide (CdS), but may be made of any suitable inorganic semiconductor material such as CdS, CdSe, ZnS or ZnSe. The polymer forming the tube 5 is a highly cross-linked polymer film of organic c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A photoelectric cell comprising first and second electrodes, a plurality of nanowires which extend between the electrodes, an a structure disposed between the nanowires.

Description

technical field [0001] The invention relates to a photovoltaic cell. Background technique [0002] Photovoltaic cells and photoconductive cells are two types of photovoltaic cells. For example, the photoelectric effect is widely used in electro-optical switches, photodetectors, solar cells and photodiodes. Since inorganic semiconductors are easy to construct into highly ordered crystals, provide a relatively high (quantum) efficiency of light (photons) into electric current (holes and electrons) and photovoltaic voltage, most commercial optoelectronic components include inorganic semiconductor. However, producing large amounts of electricity using photovoltaic elements such as solar cells is still expensive. [0003] Optoelectronic components using organic materials have the following potential advantages: large surface area, mechanical flexibility and durability, ease of processing (e.g. no need for high temperature and high vacuum processes) and in some cases lithograph...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0264H01L31/0352H10K99/00
CPCB82Y10/00H01L51/0071H01L51/426H01L51/0595H01L51/0076B82Y30/00Y02E10/549H10K85/731H10K85/657H10K10/701H10K30/35H10K30/50H01L31/08
Inventor 董德文斯蒂芬·马尔科姆·凯利玛丽·奥尼尔
Owner UNIVERSITY OF HULL