Semiconductor memory device including circuit to store access data
A technology for storing devices and accessing data, applied in digital memory information, static memory, information storage and other directions, can solve problems such as waste of electricity
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[0016] Exemplary embodiments will be described more fully with reference to the accompanying drawings.
[0017] figure 1 is a block diagram of one embodiment of a semiconductor memory device. The semiconductor device 1 includes a memory cell array 100 , a word line gate circuit 200 , a decoder 300 and a sense amplifier circuit 400 .
[0018] The memory cell array 100 may be variously implemented according to cell types. For example, a DRAM cell includes a capacitor coupled to a transistor for storing data. Transistors are used as switches. The SRAM cell includes two PMOS transistors and four NMOS transistors. In the memory cell array 100 there are a plurality of memory cells (DRAM, SRAM, etc.) arranged in a matrix and connected to word lines and bit lines.
[0019] The decoder 300 receives the address ADDR to select a word line, and then applies a word line voltage to the selected word line WL.
[0020] The word line gating circuit 200 is located between the memory cell ...
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