Semiconductor device

Abstract

A semiconductor device having a structure which can be manufactured with a higher yield includes a local interconnection layer 14 (a first interconnection layer) on a semiconductor substrate 10 and a global interconnection layer 18 (a second interconnection layer) on the local interconnection layer 14. The local interconnection layer 14 and the global interconnection layer 18 include a local interconnection 24 (a first interconnection) and a global interconnection 28 (a second interconnection), respectively, and the global interconnection 28 is thicker than the local interconnection 24. The local interconnection layer 14 and the global interconnection layer 18 also have a dummy interconnection 34 (a first dummy interconnection) and a dummy interconnection 38 (a second dummy interconnection), respectively. The dummy interconnection 34 is narrower than the dummy interconnection 38.

Description

[0001] This application is based on Japanese Patent Application No. 2004-217443, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to semiconductor devices. Background technique [0003] Conventional semiconductor devices are described, for example, in Japanese Patent Laid-Open Publication Nos. 2002-231815 and 2004-39951. In the semiconductor devices described in these references, in the interconnect layer, dummy interconnects are formed together with common interconnects. A virtual interconnect is formed for a locally uniform data rate in the interconnect layer. Here, the data rate refers to the area ratio of the interconnection in the interconnection layer. Uniform data rates can increase the uniformity of buried Cu thickness in forming interconnects and provide Cu interconnects with higher planarity in subsequent CMP (Chemical Mechanical Polishing). [0004] Certain semiconductor devices with multilayer i...

AI Technical Summary

Problems solved by technology

Because trenches for dummy interconnects consume large amounts of etchant in areas close to dummy interconnects

[0007] Recently, as the thickness of the local interconnection becomes thinner, the influence of the above-mentioned unevenness becomes remarkable, and thus these may be apparent as the yield of semiconductor devices decreases.

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